Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    YTS4124 Search Results

    YTS4124 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    YTS4124 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    YTS4124 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PE108B

    Abstract: PE108A BF248 BFY18 2SC123 2SC185 2SC357 JE9123 2SC2058 BSW42
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 See Index See Index GE Solid St Solid Stlnc See Index PhilipsElec AmperexElec FerrantiLtd See Index FerrantiLtd ~~g~~~7L ~~~~~I~cJA 2SC123 BC818•25 2SC1851 2SC1851 2SC1851 2S01617K PE108A


    Original
    2SC1317 2SC1346 SK3356 2SC963 BCX20 BCX20R BC818 ZTX338 PE108B PE108A BF248 BFY18 2SC123 2SC185 2SC357 JE9123 2SC2058 BSW42 PDF

    YTS4124

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE YTS4124 Unit in mm FOR GENERAL PURPOSE SWITCHING AND AMPLIFIER + 0,5 APPLICATIONS. FEATURES: • Low Leakage Current : ICBO=50nA Max. I EBO= ^ ^ n A ^M a X -) @ VCB=20V @ VEB= ^ V • Low Saturation Voltage : VCE(sat)=0•3V(Max.)


    OCR Scan
    YTS4124 YTS4126 SC-59 100MHz YTS4124 PDF

    YTS4126

    Abstract: YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04
    Text: - 350 - 1 1 T a = 2 5 tC . * E P f i T c = 2 5 t 5 m % m m VcBO Vceo (V) (V) ÍCC DC) (A) Pc Pc* iCBO (max) Vc b (W) (W) (ilk) (V) YTS4124 M 2 G A/SW 30 25 0. 2 0.2 0.05 20 YTS4125 M 2 G A/SW -30 -2 5 -0.2 0.2 M2 M2 M2 M2 M2 G A/SW -25 - 25 -0.2 0 .2 -0.05


    OCR Scan
    YTS41Z4 YTS4125 YTS4126 YTS4400 S4401 YTS4402 YTS4403 YTS4401 YTS4126 YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan
    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60


    OCR Scan
    YTS3903 YTS3905 YTS3904 YTS3906 YTS4123 YTS2222 YTS2907 YTS2221A YTS2906A YTS2222A PDF

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan
    2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846 PDF

    YTS4126

    Abstract: YTS4124
    Text: YTS4126 SILICON PNP EPITAXIAL TYPE Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER + 0.5 APPLICATIONS. FEATURES: • Low Leakage Current : Icj;o=-50nA Max. IEB0=_50nA(Max.) @ V q 3=-20V @ v EB=-3 v • Low Saturation Voltage : ^CE(sat)=_^ .4V(Max.)


    OCR Scan
    YTS4126 -50nA YTS4124 SC-59 -50niA, -10mA 100MHz 100MH YTS4126 YTS4124 PDF

    TIPI27

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0


    OCR Scan
    OT-23MOD 2N3903 YTS3903 2N3904 YTS3904 2N3905 YTS3905 2N3906 YTS3906 2N4123 TIPI27 PDF