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    Z2E DIODE Search Results

    Z2E DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    Z2E DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD Transistor Y12

    Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
    Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    germanium diode smd

    Abstract: "tunnel diode" oscillator SMD Transistor Y12 "Step Recovery Diode" NF50 Z2E diode Technical Explanations power transistor tunnel diode diode varactor B11 g21 SMD Transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    UJT APPLICATION

    Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    Untitled

    Abstract: No abstract text available
    Text: NCV887200 Automotive Grade Non-Synchronous Boost Controller The NCV887200 is an adjustable output non−synchronous boost controller which drives an external N−channel MOSFET. The device uses peak current mode control with internal slope compensation. The


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    PDF NCV887200 NCV887200 NCV887200/D

    transistor smd bc rn

    Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
    Text: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    Untitled

    Abstract: No abstract text available
    Text: NCV8871 Automotive Grade Non-Synchronous Boost Controller The NCV8871 is an adjustable output non−synchronous boost controller which drives an external N−channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the gate


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    PDF NCV8871 NCV8871 NCV8871/D

    Untitled

    Abstract: No abstract text available
    Text: NCV8870 Automotive Grade Non-Synchronous Boost Controller The NCV8870 is an adjustable output non−synchronous boost controller which drives an external N-channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the


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    PDF NCV8870 NCV8870 NCV8870/D

    Untitled

    Abstract: No abstract text available
    Text: NCV8876 Automotive Grade Start-Stop Non-Synchronous Boost Controller The NCV8876 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation battery voltage sags. The controller drives an external N-channel


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    PDF NCV8876 NCV8876 NCV8876/D

    Untitled

    Abstract: No abstract text available
    Text: NCV8870 Automotive Grade Non-Synchronous Boost Controller The NCV8870 is an adjustable output non-synchronous boost controller which drives an external N-channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the


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    PDF NCV8870 NCV8870 NCV8870/D

    Untitled

    Abstract: No abstract text available
    Text: NCV898031 2 MHz Non-Synchronous SEPIC/Boost Controller The NCV898031 is an adjustable output non−synchronous 2 MHz SEPIC/boost controller which drives an external N−channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that


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    PDF NCV898031 NCV898031 NCV898031/D

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    Z2E diode

    Abstract: No abstract text available
    Text: DTZ-2E4250_DOUBIE BAIANCED M KER 10 to 2500MHz/+10 c£m ID /DC Coupled F P att/C as^iee PRINCIPAL SPECIFICATIONS RF/LO Freq., MHz Model Number DTZ-2E-1250 10-2500 IF Freq., MHz Operating Range, MHz Conversion Loss, dB, Max. Typ. Port Isolation, Min. 1 dB Compr.


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    PDF DTZ-2E4250_ 2500MHz/ DTZ-2E-1250 3Feb96 Z2E diode