Z3 TRANSISTOR Search Results

Z3 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

Z3 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF484 Abstract: BF486 BF488 Text: BF484 BF486 BF488 J . PHILIPS INTERNATIONAL 5bE D I 711002b 0042174 147 invideo PHIN T-31-Z3 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a TO -92 envelope and intended fo r use white and colour television receivers. • o utpu t stages o f biaok and	OCR Scan	BF484 BF486 BF488 711002b BF484 BF486 T-31-23 BF488	PDF
RFP12N06RLE Abstract: RFD12N06RLE RFD12N06RLESM kos30 Text: HARRIS RFD12N06RLE, RFD12N06RLESM S E M I C O N D U C T O R January 1994 RFP12N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) x 0.135Q Z3 SOURCE	OCR Scan	RFD12N06RLE, RFD12N06RLESM RFP12N06RLE AN72S4 AN-72B0. RFD12N06RLESM, RFD12N06RLE kos30	PDF
2sc1586 Abstract: No abstract text available Text: <z3£fni-£onau.ct:oi iJ-^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA909 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo= -200V(Min.)	Original	2SA909 -200V 2SC1586 -50mA; -200V; 2sc1586	PDF
Untitled Abstract: No abstract text available Text: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary	OCR Scan	MHM8N20HX, MHM8P20HX,	PDF
MCT210 Abstract: No abstract text available Text: fs E SOLID STATE 01 DE \| 3ñ7S0 ñl_0 Dnfi7t 2 Optoelectronic Specifications. T -m -Z3 Photon Coupled Isolator MCT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor M IN A 8 C P E F G H J K M N P R S TOCovered under U .L . component recognition program,	OCR Scan	T-Hl-23 MCT210 MCT210 E51868 50/jA. 0110b	PDF
Untitled Abstract: No abstract text available Text: RAYTHEON/ SEMICONDUCTOR T4 Small Signal Transistors PRODUCT SPECIFICATIONS 7597360 RAYTHEON IE O N . GC » r i Y S T Y B L O 00D5517 S E M IC O N D U C TO R . Ä 05517 94D High Voltage General Purpose Amplifiers and Switches D T - ¿? -Z3 PNP Popular Types	OCR Scan	00D5517 2N3634/JAN 2N3635/JAN 2N3636/JAN 2N3637A/JAN 2N3636J 910-379-64B4 100BSC 200BSC 54BSC	PDF
BD934 Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939 Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.	OCR Scan	BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939	PDF
bfy56 Abstract: BFX56 BFY56A 5014M Y56A Text: 3DE D rZ Z ^7# • DOBIOCH 4 ■ '"’p S ' ,Z3> S G S -T H O M S O N BFY56 BFX56A S G S-THOMSON AMPLIFIERS AND SWITCHES DESCRIPTIO N The BFX56 and BFY56A are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for amplifier and switching applica	OCR Scan	BFY56 BFX56A BFX56 BFY56A ----7T2T237 5014M Y56A	PDF
QQG1703 Abstract: No abstract text available Text: bllSñbS DGQ1703 Ifll • M S C 5SE D T-II-Z3 TS-7 MICROSEMI CORP MicrojsemiCorp. 9 rfieaoae experts SCOTTSDALE, AZ SANTA AHA, CA FormoreinfonnationcaU; '" s ’ - FEATURES TRANSIENT ABSORPTION •■' ZENER • PROTECTS T T L ECL. DTL, MOS, CMOS AND MSI INTEGRATED CIRCUITS OPERATING ON POWER	OCR Scan	QQG1703 T-//-23	PDF
Transistor BFR 97 Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79 Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package	OCR Scan	fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79	PDF
Transistor BFR 35 Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91 Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package	OCR Scan	fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 35 Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91	PDF
Untitled Abstract: No abstract text available Text: T'?£~z3~/z_ Sflbfl 4 5 b OGGITM? 323 • M M H S January 1991 MATRA M H S HM 65664 HI-REL DATA SHEET 8kx8 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPLLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN	OCR Scan		PDF
TP3009 Abstract: TP3009S Text: MbE D MOTOROLA SC XSTRS/R F • b3b?254 OQ'JSHS b ■ M O T L T-5I-Z3 MOTOROLA ■ SEMICONDUCTOR ■ TECHNICAL DATA TP3009 TP3009S The RF Un UHF P o w e r T ran sisto rs 0.76 W — 900 HMz UHF POWER TRANSISTORS NPN SILICON The TP3009/5 is designed for 12.5 V, 900 MHz common-emitter amplifier operating in	OCR Scan	TP3009/5 T-31-23 C5C7C12 C2C3C10C11 L-27mm 10MF18V L-28nini Cu35pm TP3009 TP3009S	PDF
Untitled Abstract: No abstract text available Text: 30E 3> un • 7^237 0D31Q77 T ■ -Z3 B S Y 53 B S Y 54 S G S -T H O M S O N laJÛTTOMDigS S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESC RIPTIO N The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten ded for use in general purpose amplifiers.	OCR Scan	0D31Q77 BSY53 BSY54 l50mA 25-CitEÂ	PDF

67005 Abstract: No abstract text available Text: ¿f o-Z3~ IZ 4 SE D Söbä4Sb QQG13M4 1 2 e! • H f l H S Preview September 1990 MATRA M H S M 67005 DATA SHEET 8 Kx8 CMOS DUAL PORT RAM FEATURES FAST ACCESS TIME: - MILITARY : 35 TO 55 ns (max - COMMERCIAL : 25 TO 55 ns (max) VERY LOW POWER CONSUMPTION :	OCR Scan	QQG13M4 POR50 67005	PDF
MWS5101EL3 Abstract: MWS5101EL3X MWS5101DL3 MWS5101ADL3 Text: HARRIS^SEm COND MbE D SECTOR 430E271 003^047 b IHAS MWS5101 MWS5101A T-~4 fc~Z3 ' 0 y HARRIS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4 bit static	OCR Scan	430E271 MWS5101 MWS5101A 256-Word MWS5101A MWS5101, MWS5101EL3 MWS5101EL3X MWS5101DL3 MWS5101ADL3	PDF
bzx98c Abstract: 1N30098 Z3813 Z3827 in137 Text: SEU ITRO N IN D U S T R IE S LTD 43E 013700^ D QGGD 1 S 3 4 B1 S L C B rT'-lU\"7 IN3900/IN2900/Z3 S E R I E S Hermetically Sealed •Voltage Regulator Diode Released to BS9305-F079 ■Voltage Range 3.0 to 400 Volts 10.0 Watt Steady State ■400 Watt Peak Power	OCR Scan	IN3900/IN2900/Z3 BS9305-F079 9305-F-079 DO-35 DO-41 DO-15 DO-201AD bzx98c 1N30098 Z3813 Z3827 in137	PDF
CD40248 Abstract: cd40408 CD4020B C04020B CS207 C040408 CD4040B CD4040B Types CD4024B KHA 159 Text: 44.E HA R R I S S E U I C O N D S E C T O R D • 4302271 GG373aS 5 ■ H A S 7=-VS-Z3-/ 7 2 C D 4020B , C D 4024B , C D 4040B Types H A R R IS Features: CMOS Ripple-Carry Binary Counter/Dividers ■ ■ ■ ■ ■ H igh-Voltage Types 2 0 -V o lt Rating)	OCR Scan	43D2271 G0373flS CD4020B, CD4024B, CD4040B 20-Volt CD4020B CD4024B CD4040B CD40248 cd40408 CD4020B C04020B CS207 C040408 CD4040B Types CD4024B KHA 159	PDF
xps-CM Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch Text: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed	Original	14IES 4V/20mA) A/143/00 xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch	PDF
Untitled Abstract: No abstract text available Text: MICROPAC IN DUS TRIES INC 1SE D b l l E t » 4 Q QQQObSö fi 66004, 66005 // HIGH VOLTAGE OPTO-ISOLATORS O P T O E L E C T R O N IC PR O D U C TS • D IV IS IO N ~r-y/-z3 40,000 V FEATURES 0 .0 1 6 BLACK DOT / J 2 LEADS High tem perature operation + 1 2 5 4C	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: POWEREX INC m u 3*ìE D m x • TSTMbSl DDOMIGÖ b M P R X _ T^Z3~3^ K R 421K 15 Pow erex, In c ., HIIHs Street, Youngw ood, Pennsylvania T5697 4 1 2 925-7272 C h o p p e r D a r lìn g tO ll Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 4 1 .14 .1 4	OCR Scan	T5697 BP107, Amperes/1000	PDF
642J Abstract: 6N137 NEC photo coupler Text: N E C ELECTRONICS 6427525 N E C I NC 73 DE P b 4 S 7 S E S 0 0 a EJ E43 EL EC TR ONI CS , INC ¡ NEC NEC Electronics Inc. 72C ¿ 9 2 4 3 T-HÌ-Z3 D 6N137 HIGH S PEED PH OTO CO U P LER • N E P O C SERIES D e s c rip tio n F e a tu re s The 6N137 is a high speed photo coupler containing a	OCR Scan	D0cia43 6N137 6N137 350fl 642J NEC photo coupler	PDF
mjM6052 Abstract: No abstract text available Text: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs	OCR Scan	MIL-S-19500/ O-116) mjM6052	PDF
transistor z3 Abstract: TRANSISTOR Z4 Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor z3 TRANSISTOR Z4	PDF

Z3 TRANSISTOR Search Results

Z3 TRANSISTOR Result Highlights (5)

Z3 TRANSISTOR Datasheets Context Search

BF484

RFP12N06RLE

2sc1586

Untitled

MCT210

Untitled

BD934

bfy56

QQG1703

Transistor BFR 97

Transistor BFR 35

Untitled

TP3009

Untitled

67005

MWS5101EL3

bzx98c

CD40248

xps-CM

Untitled

Untitled

642J

mjM6052

transistor z3