Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip
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CY7C1061G/CY7C1061GE
16-Mbit
ns/15
90-mA
20-mA
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23383-C
Abstract: No abstract text available
Text: N16L163WC2C NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com Advance Information 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 16 bit Overview Features The N16L163WC2C is an integrated memory
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N16L163WC2C
1024K
N16L163WC2C
23383-C
23383-C
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CY62157EV30LL-45BVXI
Abstract: TSOP 48 thermal resistance
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
CY62157EV30LL-45BVXI
TSOP 48 thermal resistance
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in
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CY62158DV30
1024K
CY62158DV30
CY62158DV
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CY62167DV30L-55ZI
Abstract: CY62167DV30
Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed
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CY62167DV30
16-Mbit
I/O15)
CY62167DV30
48-lead
BV48A
BV48B
CY62167DV30L-55ZI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip
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CY7C1061G/CY7C1061GE
16-Mbit
ns/15
90-mA
20-mA
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CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or
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CY62157DV30
I/O15)
CY62157CV25,
CY62157CV30,
CY62157C.
CY62157DV
CY62157DV30
CY62157CV25
CY62157CV30
CY62157CV33
cy62157dv30l-55zxi
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Untitled
Abstract: No abstract text available
Text: CY62177ESL MoBL 32-Mbit 2 M x 16/4 M × 8 Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features Functional Description • Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns
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CY62177ESL
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
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48TSOPI
Abstract: No abstract text available
Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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CY62167E
16-Mbit
48-pin
I/O15)
48TSOPI
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-ball
48-pin
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IO14
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-ball
48-pin
IO14
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CY62167DV30L-55ZI
Abstract: CY62167DV30
Text: CY62167DV30 MoBL 16-Mb 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed
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CY62167DV30
16-Mb
I/O15)
CY62167DV30
CY62167DV30L-55ZI
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-rize
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Untitled
Abstract: No abstract text available
Text: CY62177EV18 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 70 ns
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CY62177EV18
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-ball
48thorize
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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ECG5646
Abstract: triac ecg ECG diac DIAC triac and diac
Text: TRIACS cont'd IT RMS Max Forward Current (Amps) vrrm DC or Peak Volts 12 A 16 A IS A 25 A 50 ECG5681 100 ECG5682 200 ECG56004 ECG56015 ECG56019 ECG5683 ECG5675 ECG56006 ECG56016 ECG56020 ECG5685 ECG5677 ECG56008 ECG56017 ECG5673 400 600 ECG5667A 800 ECG5668A
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OCR Scan
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PDF
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O-220
ECG5646
1-133IT
triac ecg
ECG diac
DIAC
triac and diac
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triac b 978
Abstract: ECG5679 ECG56024 ECG56022 ECG56026 ECG56030 ECG5689 ECG5693 main 0s ECG5688
Text: TRIACS cont'd •T RMS Max Forward Current (Amps) vrrm DC or Peak Volts | 45 A 40 A 200 ECG5693 ECG56022 400 ECG5695 ECG56024 600 ECG5697 ECG56026 ECG5688 ECG5679 ECG5689 ECG56030 ECG5690 ECG56031 800 ECG56033 ECG56028 1000 100 Quads I,II,III 50 80 150 Quad
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OCR Scan
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PDF
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ECG5693
ECG56022
ECG5688
ECG5695
ECG56024
ECG5689
ECG56030
ECG5697
ECG56026
ECG5679
triac b 978
ECG56024
ECG56022
ECG56030
ECG5693
main 0s
ECG5688
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ECG56006
Abstract: ECG5646 5218 8 PIN 225 triac ECG56020 Z-59 ECG5679 diac 3 Pin TO220 Package triac ecg56 ECG5671
Text: P H I L I P S E C G INC S l4E ]> bbSB'iSô 0007222 323 M E C G TRIACS cont'd IT RMS M ax Forward Current (Amps) vrrm DC or Peak Volts 12 A 15 A 16 A 25 A 50 ECG5681 100 ECG5682 200 ECG5673 ECG56004 ECG56015 ECG56019 ECG5683 400 ECG5675 ECG56006 ECG56016
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OCR Scan
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PDF
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ECG5681
ECG5682
ECG5673
ECG56004
ECG56015
ECG56019
ECG5683
ECG5675
ECG56006
ECG56016
ECG56006
ECG5646
5218 8 PIN
225 triac
ECG56020
Z-59
ECG5679
diac 3 Pin TO220 Package
triac ecg56
ECG5671
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transistor buz 36
Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A
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OCR Scan
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23StQS
T0-220
O-220
BUZ10S2
Z72AL
Z73AL
O-218
transistor buz 36
A1301 transistor
Z346
z309
A3206A
A1306A
z326
A1320A
A1610-A2
Z22A
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ECG5638
Abstract: ecg5679 5218 8 PIN ecg5620 ECG5607 ECG5656 ECG5626 ECG5629 ECG5642 ECG5624
Text: PHILIPS E C G INC 54E J> bbSBSBfl 0QG7221 4*17 « E C G TRIACS Vr rm DC or Peak Volts >T RMS M ax Forward Current Amps 2.8j A 0.8 A 100 10 A 8A 4A ECG5601 ECG5612 ECG5622 ECG5631 ECG5640 ECG5650 ECG5602 ECG5613 ECG5623 ECG5632 50 200 ECG5655 ECG5641 ECG5603
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OCR Scan
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PDF
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DDG72S1
ECG5601
ECG5612
ECG5622
ECG5631
ECG5640
ECG5650
ECG5602
ECG5613
ECG5623
ECG5638
ecg5679
5218 8 PIN
ecg5620
ECG5607
ECG5656
ECG5626
ECG5629
ECG5642
ECG5624
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ECG5645
Abstract: ECG5651 TRIAC ECG5603 ECG5638 ECG5656 ECG5606 triac ecg5629 ECG5629 ECG5652 Z593
Text: PHILIPS E C G INC 54E J> bbSBSBfl 0QG7221 4*17 « E C G TRIACS Vr rm DC or Peak Volts >T RMS M ax Forward Current Amps 2.8j A 0.8 A 100 10 A 8A 4A ECG5601 ECG5612 ECG5622 ECG5631 ECG5640 ECG5650 ECG5602 ECG5613 ECG5623 ECG5632 50 200 ECG5655 ECG5641 ECG5603
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OCR Scan
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PDF
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0QG7221
ECG5601
ECG5612
ECG5622
ECG5631
ECG5613
ECG5623
ECG5632
ECG5614
ECG5624
ECG5645
ECG5651
TRIAC ECG5603
ECG5638
ECG5656
ECG5606
triac ecg5629
ECG5629
ECG5652
Z593
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