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    ZC823 Price and Stock

    JRH Electronics 805-003-01ZC8-23AF

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    DigiKey 805-003-01ZC8-23AF 1
    • 1 $762.14
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    • 100 $670.686
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    JRH Electronics 805-003-02ZC8-23HD

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    DigiKey 805-003-02ZC8-23HD 1
    • 1 $1195.15
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    • 100 $1051.73
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    JRH Electronics 805-003-02ZC8-23PF

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    DigiKey 805-003-02ZC8-23PF 1
    • 1 $1195.15
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    JRH Electronics 805-004-01ZC8-23BF

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    DigiKey 805-004-01ZC8-23BF 1
    • 1 $791.1
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    • 100 $696.1712
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    JRH Electronics 805-004-01ZC8-23GA

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    DigiKey 805-004-01ZC8-23GA 1
    • 1 $791.1
    • 10 $791.1
    • 100 $696.1712
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    ZC823 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZC823 Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODE Original PDF
    ZC823 Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES Original PDF
    ZC823 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    ZC823 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC823 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZC823 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    ZC823 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZC823 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC823A Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODE Original PDF
    ZC823B Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODE Original PDF

    ZC823 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3819 spice model

    Abstract: construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent
    Text: Applications Note 9 Issue 4 July 2002 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable


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    PDF ZC934A OD523 OT323 ZV950V2 ZMDC950 ZV951V2 ZMDC951 ZV952V2 ZMDC952 ZV953V2 2N3819 spice model construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    2N3819 spice model

    Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
    Text: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable


    Original
    PDF 50MHz) OT-23 ZC740 FMMV2101 ZC741 FMMV2102 ZC742 FMMV2103 ZC743 2N3819 spice model varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    C20 diode, TO

    Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
    Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)


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    PDF ZC820 50MHz ZC821 ZC822 ZC823 ZC824 ZC825 ZC826 C20 diode, TO 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    ZC825 SOT-23

    Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


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    PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC825 SOT-23 diode marking w8 marking Z6 ZC803 ZC804

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


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    PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 ZC82

    ZC823

    Abstract: ZC821 diode 816
    Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M1 i» ii 1 CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage MAX U N IT Vr 25 V Forw ard Current If 200 mA Power Dissipation at T amb=25°C


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    PDF ZC820 ZC821 ZC822 ZC823 ZC824 ZC825 ZC826 diode 816

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 .564 SOT23
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SER IES FOR PCB MOUNTING. C H A R A C T E R IS T IC S at 2 5 °C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q


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    PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 .564 SOT23

    ZC800

    Abstract: HYPERABRUPT ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821
    Text: HYPER ABRUPT VARIABLE CAPACITANCE TUNER DIODES S IL IC O N IO N IM P L A N T E D H Y P E R A B R U P T T U N E R D IO D E S Designed for use in HF, V H F, U H F electronic tuning applications where large capacitance variations and high Q are required. Tamb = 25*C


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    PDF C2/C20 ZC800 ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821 HYPERABRUPT

    Untitled

    Abstract: No abstract text available
    Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M 1 k CATHODE ANODE ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L R everse Voltage M AX UNIT Vr 25 V Forward Current 'F 200 mA Pow er Dissipation at T amb=25°C


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    PDF ZC820 001G35S

    Untitled

    Abstract: No abstract text available
    Text: 5bE D • ^70570 GOGbTH? bflT ■ Z E T B E-LINE DIODE SPECIFICATIONS S C H O T T K Y BARRIER DIODES ZETEX T - c n - i^ SEMICONDUCTORS T h e se de v ice s have a high breakdow n voltage and ultra fa st sw itc h in g capabilities. R.F. applications in clu d e low n o ise m ixers, large and sm all signal detectors, lim iters and discrim inators. A p p lica tio n s


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    PDF ZC2800 ZC2811 ZC5800 7G57fl DO-35)

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


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    PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    zc826 IC

    Abstract: No abstract text available
    Text: PLESSEY S E M I C O N D / D I S C R E T E T S 7 2 20 5 33 PLESSEY dF | ? 2E0SB3 95D 0 4 9 8 4 S E M I C O N D / D I S C RE TE fl D i TABLE 4 : VARIABLE CAPACITANCE TUNER DIODES HYPEBABRUPTTYPEI ! i T-oi-n Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning


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    PDF ZC800, ZC820 ZC830A ZC800 perature-ZC800 ZC830 zc826 IC

    V3102

    Abstract: No abstract text available
    Text: R.F. TRANSISTORS AND DIODES TABLE 2: E-LINE H YPERA BRU PT V A R IA B LE C A P A C IT A N C E TUNER D IO D ES Hyperabrupt tuning diodes m ay be used in any electronic tuning syste m to replace conventional tuning diodes. Rem ote tuning control, autom atic frequency control and octave tuning in mobile, air­


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    PDF ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A OT-23 BBY31 BBY40 V3102

    ZC830

    Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
    Text: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast sw itching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 infi832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825

    marking NB D9 sot-23

    Abstract: ZC821 ZC825 SOT23 ZC825 SOT-23 ZC800 ZC801 ZC802 ZC803 ZC820 ZC822
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICON ION IMPLANTED HYPERABRUPT TUNER DIODES Designed for use in HF, VHF and UHF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a semiconductor doping technique enabling close control of doping and profile. Its


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    PDF ZC800, ZC820 ZC830A OT-23 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A marking NB D9 sot-23 ZC821 ZC825 SOT23 ZC825 SOT-23 ZC800 ZC801 ZC802 ZC803 ZC822

    ZC821

    Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its


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    PDF ZC800, ZC820 ZC830A OT-23 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC821 NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC822

    K 250 diode

    Abstract: k1a1 diode 816
    Text: E-LINE DIODES TABLE 12: PRECISION MICROPOWER VOLTAGE R EFERENCES PART NO. Nominal Voltage V# PIN OUT Guaranteed Knee Current UA Slope Resistance n Temperature Coefficient PPM/°C 1 2 3 50 50 20 50 50 50 1 2 2 2 2 2 50 50 50 90 90 90 n/c n/c n/c n/c n/c n/c


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    PDF ZRB500A ZRA400A ZRC330A ZRA250A ZRA125A ZRA124A ZRB500Y ZRA400Y ZRC330Y ZRA250Y K 250 diode k1a1 diode 816