transistor c143
Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
Text: DTC143 ZM/ZE/ZUA/ZCA/ZSA Taiwan Semiconductor Small Signal Product PNP Small Signal Transistor FEATURES - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor SOT523/SOT323/SOT23 see equivalent circuit
|
Original
|
DTC143
OT523/SOT323/SOT23
OT-723
S1404021
transistor c143
C143 Transistor
ze 003 ic
ZUA SOT23
ze 003
zua SOT-23
ZE SOT-23
marking CODE ZUA SOT23
|
PDF
|
marking EB 202 transistor
Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package 2SC4672 (M PT3) +0.2 4 .5 —0 1 • • • package marking: 2SC4672; DK-fr, where ★ is hFE code 1.6 * 0.1 zE L if low collector saturation voltage,
|
OCR Scan
|
2SC4672
OT-89,
SC-62)
2SC4672;
2SC4672
marking EB 202 transistor
transistor 2SC4672
ZE TRANSISTOR MARKING
|
PDF
|
ze 003 ic
Abstract: marking CODE ZUA SOT23 ZUA SOT23 ZCA TRANSISTOR transistor E21 MARKING ZE SOT-23 ze 003 ZCA transistor sot 23 sot-23 MARKING CODE ZCA 8k sot 23 marking
Text: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTC113
OT-723
OT-523
OT-323
OT-23
O-92S
ze 003 ic
marking CODE ZUA SOT23
ZUA SOT23
ZCA TRANSISTOR
transistor E21
MARKING ZE SOT-23
ze 003
ZCA transistor sot 23
sot-23 MARKING CODE ZCA
8k sot 23 marking
|
PDF
|
ZUA SOT23
Abstract: ZCA TRANSISTOR marking CODE ZUA SOT23 zua marking code sot 23 ZCA transistor sot 23 marking code zua
Text: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTC113
OT-723
OT-523
31TYP
O-92S
ZUA SOT23
ZCA TRANSISTOR
marking CODE ZUA SOT23
zua marking code sot 23
ZCA transistor sot 23
marking code zua
|
PDF
|
ZUA SOT23
Abstract: No abstract text available
Text: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTA143
OT-723
OT-523
31TYP
O-92S
ZUA SOT23
|
PDF
|
ze 003
Abstract: ZUA SOT23 ZCA TRANSISTOR ze 003 ic transistor E23 ZCA transistor sot 23 ZCA SOT-23 marking CODE ZUA SOT23 sot-23 MARKING CODE ZCA sot 23 zua
Text: DTC143 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Z+A1SA Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTC143
OT-723
OT-523
OT-323
OT-23
O-92S
ze 003
ZUA SOT23
ZCA TRANSISTOR
ze 003 ic
transistor E23
ZCA transistor sot 23
ZCA SOT-23
marking CODE ZUA SOT23
sot-23 MARKING CODE ZCA
sot 23 zua
|
PDF
|
ze 003 ic
Abstract: ze+003+ic ze 003 ZUA SOT23
Text: DTC143 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Z+A1SA Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTC143
OT-723
OT-523
31TYP
O-92S
ze 003 ic
ze+003+ic
ze 003
ZUA SOT23
|
PDF
|
ZCA TRANSISTOR
Abstract: marking E13 diode ZUA SOT23 sot-23 MARKING CODE ZCA ZCA transistor sot 23 marking CODE ZUA SOT23 MARKING ZE SOT-23 SOT23 MARKING ZuA ze 003 e13 142
Text: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTA143
OT-723
OT-523
OT-323
OT-23
O-92S
ZCA TRANSISTOR
marking E13 diode
ZUA SOT23
sot-23 MARKING CODE ZCA
ZCA transistor sot 23
marking CODE ZUA SOT23
MARKING ZE SOT-23
SOT23 MARKING ZuA
ze 003
e13 142
|
PDF
|
marking CODE ZUA SOT23
Abstract: No abstract text available
Text: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Product Features Equivalent Circuit ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ◇ The bias resistors consist of thin -film resistors with
|
Original
|
DTC113
OT-523
OT-723
marking CODE ZUA SOT23
|
PDF
|
ZUA SOT23
Abstract: SOT-723 marking,13 zua marking code sot 23
Text: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Small Signal Product Features ◇ Built-in bias resistors enable the configuration of an inverter Equivalent Circuit circuit without connecting external input resistor see equivalent circuit . ◇ The bias resistors consist of thin-film resistors with
|
Original
|
DTA143
OT-523
OT-723
ZUA SOT23
SOT-723 marking,13
zua marking code sot 23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A R N 4902 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4902 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 1.25 ± 0.1 • ZE- Including Two Devices in US6 (Ultra Super Mini Type with 6
|
OCR Scan
|
RN4902
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1945 FOR GENERAL-PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1945 is a rasin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unitmm designed with high collector current and high voltage.
|
OCR Scan
|
2SA1945
2SA1945
2SC5211.
150MHztyp
600mA
SC-62
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
|
Original
|
NESG2021M16
NESG2021M16
NESG2021M16-T3
PU10393EJ01V0DS
|
PDF
|
A008
Abstract: MD127 DIAGRAM iris sat DFN10 A008 TRANSISTOR DFN-10 ic a008 11-MD127 11MD127 JESD51-7
Text: 11-MD127 Version Issue Date File Name Total Pages : A.008 : 2006/08/31 : SP-MD127-A.008.doc : 10 Low-saturation, Low-voltage 2 Channels Bi-directional Motor Driver 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Rd I, Science-Based Industrial Park
|
Original
|
11-MD127
SP-MD127-A
Tel886-3-5645656
Fax886-3-5645626
MSOP10
DFN10
A008
MD127
DIAGRAM iris sat
A008 TRANSISTOR
DFN-10
ic a008
11-MD127
11MD127
JESD51-7
|
PDF
|
|
|
Transistor 4515
Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Text: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
|
OCR Scan
|
029426A
50B4DIN41867
569-GS
000s154
hal66
Transistor 4515
CF300
transistor D 4515
lm 4580
Telefunken u 237
sot-23 MARKING CODE ZA
SY 180/4
TRANSISTOR BC 414
W-25
CF-300
|
PDF
|
2SJ508
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS
|
OCR Scan
|
2SJ508
-100V)
-10ton
10jus
VDD--80V,
2SJ508
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L 2-7r-MOS V 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • •
|
OCR Scan
|
2SJ508
-100V)
10/iS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
|
Original
|
NESG2021M16
NESG2021M16
NESG2021M16-A
PU10393EJ03V0DS
|
PDF
|
2SK238
Abstract: No abstract text available
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK238 FM TUNER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Low Feedback Capacitance Crss * 0.07 pF TYP. in m illim eter« •H ig h l y fs I l y fs I * 3.5 ms TYP. ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
2SK238
2SK238
|
PDF
|
2N5401S SOT-23
Abstract: 2N5401S
Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V
|
Original
|
2N5401S
-160V,
-150V
-50nA
-120V
-50mA,
-10mA,
100MHz
2N5401S SOT-23
2N5401S
|
PDF
|
2SK520
Abstract: k41 transistor transistor k41 transistor k42 marking k42 AM radio K447
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK 520 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in m illim » t» ri • Good for AM Radio Application • High I y,s I I yfs I = 17 mS TYP. 2 8 *0 -2
|
OCR Scan
|
2SK520
2SK520
k41 transistor
transistor k41
transistor k42
marking k42
AM radio
K447
|
PDF
|
2N5401S
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=-50nA Max. @VCB=-120V
|
Original
|
2N5401S
-160V,
-150V
-50nA
-120V
-50mA,
-10mA,
100MHz
2N5401S
|
PDF
|
2N5401S
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 H A 3 G : VCBO=-160V, VCEO=-150V ・Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V
|
Original
|
2N5401S
-160V,
-150V
-50nA
-120V
-50mA,
-10mA,
100MHz
2N5401S
|
PDF
|
2SJ508
Abstract: marking ze
Text: TOSHIBA 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS 4 V Gate Drive
|
OCR Scan
|
2SJ508
marking ze
|
PDF
|
