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    ZENER 7.5 B Search Results

    ZENER 7.5 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZENER 7.5 B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    zener diode

    Abstract: CMPZ5234B "Zener Diode" zener diode chip CMPZ5221B CPZ18
    Text: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 x 7.5 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY


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    CPZ18 CMPZ5221B CMPZ5234B 22-March zener diode CMPZ5234B "Zener Diode" zener diode chip CMPZ5221B CPZ18 PDF

    zener diode chip

    Abstract: CMPZ5221B CMPZ5234B CPZ18
    Text: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 X 7.5 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP


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    CPZ18 CMPZ5221B CMPZ5234B 14-May zener diode chip CMPZ5221B CMPZ5234B CPZ18 PDF

    zener diode chip

    Abstract: CMPZ5235B CMPZ5261B CPZ19 Zener diode Diode c 642 zener wafer
    Text: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY


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    CPZ19 CMPZ5235B CMPZ5261B 22-March zener diode chip CMPZ5235B CMPZ5261B CPZ19 Zener diode Diode c 642 zener wafer PDF

    Zener Diode

    Abstract: zener diode chip CMPZ5235B CMPZ5261B CPZ19
    Text: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP GEOMETRY


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    CPZ19 CMPZ5235B CMPZ5261B 22-April Zener Diode zener diode chip CMPZ5235B CMPZ5261B CPZ19 PDF

    MTZJ SERIES ZENER DIODES

    Abstract: zener 6b1 6b2 zener zener 5.1
    Text: LESHAN RADIO COMPANY, LTD. MTZJ SERIES ZENER DIODES MTZJ MTZJ SERIES ZENER DIODES Package Dimensions: DO-35 VZ V Zener Voltage Z Part No (Thin suffix) Voltage A 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 MTZJ 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 1.880-2.100


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    DO-35 MTZJ SERIES ZENER DIODES zener 6b1 6b2 zener zener 5.1 PDF

    p9nk80

    Abstract: B1 6 zener F9NK80Z smps 220 6 P9NK80Z Zener Diode B1 9 STF9NK80Z STP9NK80Z LE32
    Text: STP9NK80Z STF9NK80Z N-CHANNEL 800V -0.9Ω - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP9NK80Z STF9NK80Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V <1.2 Ω <1.2 Ω 7.5 A 7.5 A


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    STP9NK80Z STF9NK80Z O-220/TO-220FP O-220 p9nk80 B1 6 zener F9NK80Z smps 220 6 P9NK80Z Zener Diode B1 9 STF9NK80Z STP9NK80Z LE32 PDF

    1N5349b

    Abstract: 1N5360B 1N2982B 1N5339B 1N2981B 1N5353B CZ5354B 1N2986B 1n3311b 1N5335B
    Text: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3 50 mil * DO-5* ZENER VOLTAGE INDUSTRY STANDARD RECOMMENDED FOR NEW DESIGNS GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7


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    DO-201 1N5334B* 1N5335B* 1N5336B* 1N5337B* 1N5338B* 1N5339B* 1N5340B* 1N5341B* 1N5342B* 1N5349b 1N5360B 1N2982B 1N5339B 1N2981B 1N5353B CZ5354B 1N2986B 1n3311b 1N5335B PDF

    ma 8127

    Abstract: No abstract text available
    Text: 3KPSMC28A GPP TRANSIENT VOLTAGE SUPPRESSOR 3000 WATT PEAK POWER 7.5 WATTS STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 3000 watt surage capability at 1ms Excellent clamping capability Low zener impedance


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    3KPSMC28A DO-214AB ma 8127 PDF

    3KP28A

    Abstract: No abstract text available
    Text: 3KP28A GPP TRANSIENT VOLTAGE SUPPRESSOR 3000 WATT PEAK POWER 7.5 WATTS STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 3000 watt surage capability at 1ms Excellent clamping capability Low zener impedance


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    3KP28A 3KP28A PDF

    zener 5B1

    Abstract: 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B
    Text: LESHAN RADIO COMPANY, LTD. 1N9 SERIES ZENER DIODES 1N9 1N9 SERIES ZENER DIODES 4.5 5.5 6.5 7.5 8.5 9.5 11.5 13 16 17 21 25 29 33 41 49 58 70 80 93 105 125 150 185 230 270 330 400 500 750 900 1100 1500 1700 2200 2500 700 700 700 700 700 750 750 750 750 750


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    1N957B 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B zener 5B1 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B PDF

    Untitled

    Abstract: No abstract text available
    Text: SZ6A7.5 thru SZ6A270 SOLID STATE DEVICES, INC. 6.0 W, 8.0W, and 10W 7.5 - 270 VOLTS ZENER DIODES 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: • Hermetically Sealed in Glass • Metallurically Bonded


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    SZ6A270 SZ6A270L) PDF

    SZ3B430

    Abstract: SZ3B130 SZ3B10 SZ3A24 SZ3A13 SZ3A12 SZ3A10 SZ3A220 SZ3A510 SZ2B
    Text: SZ3A7.5 thru SZ3A510 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 3.0 W and 4.W 7.5 – 510 VOLTS ZENER DIODES DESIGNER’S DATA SHEET FEATURES:


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    SZ3A510 Z00004D SZ3B430 SZ3B130 SZ3B10 SZ3A24 SZ3A13 SZ3A12 SZ3A10 SZ3A220 SZ3A510 SZ2B PDF

    Untitled

    Abstract: No abstract text available
    Text: SZ6A7.5 thru SZ6A270 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 6.0 W, 8.0W, and 10W 7.5 - 270 VOLTS ZENER DIODES Designer's Data Sheet FEATURES: • Hermetically Sealed in Glass • Metallurically Bonded


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    SZ6A270 SZ6A270L) PDF

    1N3016

    Abstract: 1N3051 1N3821 1N3821UR-1 1N3830A JANTX1N3821 Microsemi micronote series 050 DO-202AA zener DIODE 5.1 V 1 watt
    Text: 1N3821 thru 1N3830A, e3 1 Watt Metal Case Zener Diodes SCOTTSDALE DIVISION APPEARANCE This well established zener diode series for the 1N3821 thru 1N3830A JEDEC registration in the glass hermetic sealed DO-13 package provides a low voltage selection for 3.3 to 7.5 volts. It is also well suited for highreliability applications where it is available in JAN, JANTX, and JANTXV


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    1N3821 1N3830A, 1N3830A DO-13 1N3016 1N3051 DO-13 DO-202AA) 1N3016 1N3821UR-1 1N3830A JANTX1N3821 Microsemi micronote series 050 DO-202AA zener DIODE 5.1 V 1 watt PDF

    1N3812

    Abstract: 1N3685 1N3702 1N3707 1N3678 1N3679 1N3680 1N3681 1N3682 1N3683
    Text: Zener Type No. Max. Zener Impedance @ Ut Ohms Zener Voltage Tolerance No Suffix = 2 0 % Suffix A =i 1 0 % Suffix B = 5 % /, „ 9.1 10.0 11.0 14.0 12.5 11.5 7.5 8.5 9.5 12.0 13.0 15.0 10.5 9.5 8.5 11.5 13.0 16.0 16.0 18.0 20.0 7.8 7.0 6.2 1N3087 1N3688 1N3689


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    1N3678 1N3679 1N3680 1N3681 1N3682 1N3683 1N3684 1N3685 1N3686 1N3687 1N3812 1N3702 1N3707 1N3680 1N3683 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEMPERATURE COMPENSATED ZENER REFERENCE DIODES JEDEC P art Number i i i i i i Nominal Zener Zanar Test Voltage Currant V. Votta t„ |fflA) 6.2 7.5 Minimum Maximum Maximum Effective ;Si2s8iS£s5 ZSjSeiKS Mexlmum Voltage Zener P ack age Voltage Voltage Temperature Temperature Temperature


    OCR Scan
    1N829A 1N4581 1N45S2A 1N4S83A DO-35 PDF

    CZ633

    Abstract: No abstract text available
    Text: iiiii CZ6316 Series • 500 mWatt Low Noise Zener Diodes Nominal Zener Voltage 'Z2 +/- 5% Minimal Zener Voltage ® i2, 250|jA Test Current <Zz @ V a ) (Vz i ) *22 Type Volts Volts mA CZ6321 7.5 8.2 6.6 20 20 CZ6322 CZ6323 CZ6324 CZ6325 CZ6326 CZ6327 CZ6328


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    CZ6316 CZ6321 CZ6322 CZ6323 CZ6324 CZ6325 CZ6326 CZ6327 CZ6328 CZ6329 CZ633 PDF

    Untitled

    Abstract: No abstract text available
    Text: I • inn CZ4954 Series • 5 Watt Zener Diodes Nomina! Zener « Iz, <Vz> Type Volts CZ4954 CZ4955 CZ4956 CZ4957 CZ4958 6.8 7.5 8.2 CZ4959 CZ4960 CZ4961 CZ4962 CZ4963 CZ4964 CZ4965 CZ4966 CZ4967 CZ4968 CZ4969 CZ4970 CZ4971 CZ4972 CZ4973 CZ4974 CZ4975 CZ4976


    OCR Scan
    CZ4954 CZ4954 CZ4955 CZ4956 CZ4957 CZ4958 CZ4959 CZ4960 CZ4961 CZ4962 PDF

    BZV55C12

    Abstract: BZV55C6V8 BZV55C4V3 BZV55C6V2 BZV55C15
    Text: SMD Zener Diodes Continued 500mW POWER 1.0 W %> % SOD-80 CASE PREFERRED ZENER VOLTAGE INDUSTRY STANDARD 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 CLL5221B* CLL5222B*


    OCR Scan
    500mW OD-80 CLL5221B* CLL5222B* CLL5223BCLL5224B* CLL5225B* CLL5226B CLL5227B CLL5228B CLL5229B BZV55C12 BZV55C6V8 BZV55C4V3 BZV55C6V2 BZV55C15 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310


    OCR Scan
    1N33Q5 1N3307 1N3308 1N3309 1N3310 1N3312 1N3313 1N3314 1N3315 1N3316 PDF

    1N5349

    Abstract: 1n 5349 5366B 5342B 1N5346 5343 IN 5347 5361B 1N5352 5349B
    Text: GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type Vz t ' I z t * 'Z T * nom. V 5W P P P P P P P P P P P P P P P P P P / (mA) r Z T 'IZ T * Tolerance on nominal V j P : Preferred voltages. 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2


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    PDF

    lN555

    Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559
    Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5


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    1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 lN555 1N5557 1N5559 PDF

    1N561 JAN

    Abstract: IN5552 IN5618 DIODE lN555 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556
    Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5


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    1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 1N561 JAN IN5618 DIODE lN555 PDF

    BZY9

    Abstract: No abstract text available
    Text: BZY9 1 series Voltage Range 7.5 - 75 Volts 5 00 0 W att Peak Pulse Power 100 W att Steady State @ 25°C 75 W att Steady State @ 65°C M ECHANICAL CHARACTERISTICS FEATURES Polarity: Indicated by direction of zener symbol • Weight: 14 grammes excluding mounting


    OCR Scan
    300/uS 100juS BZY91C BZY9 PDF