J201 spice
Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
|
Original
|
LS3250
OT-23
J201 spice
dual P-Channel JFET sot23
2n4416 transistor spice
LS3250A
a7 surface mount diode
J202 TRANSISTOR
fet j310
|
PDF
|
Dual pnp Dual npn Transistor
Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
|
Original
|
LS3550
OT-23
Dual pnp Dual npn Transistor
n-channel JFET sot23-6
surface mount pico-amp diode
dual P-Channel JFET sot23
A1 sot23 n-channel
dual Channel JFET sot23
"Dual npn Transistor"
LS841 SOIC
J110 spice
A6 SOT-23 MOSFET P-CHANNEL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1
|
Original
|
LS301
LS302
LS303
100MHz
250mW
500mW
LS301ithic
|
PDF
|
J201 Replacement
Abstract: 2N5019 "direct replacement"
Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation
|
Original
|
IT124
IT124
250mW
500mW
J201 Replacement
2N5019 "direct replacement"
|
PDF
|
Current Regulator Diode
Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
|
Original
|
LS350
LS351
LS352
275MHz
250mW
500mW
LS352
Current Regulator Diode
J110 spice
J502
"Dual npn Transistor"
"Dual PNP Transistor"
VCR11N
J201 spice
Dual PNP Transistor
U402 N CHANNEL FET
jfet differential transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
|
Original
|
LS310
LS311
LS312
LS313
250MHz
250mW
500mW
|
PDF
|
J201 Replacement
Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current
|
Original
|
IT130A
IT130
IT131
IT132
250mW
500mW
J201 Replacement
JFET 401
Dual PNP Transistor
depletion 60V power mosfet
3N165 "pin compatible"
|
PDF
|
sot 26 Dual N-Channel MOSFET
Abstract: 10mA JFET LS358
Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C
|
Original
|
LS358
250mW
500mW
sot 26 Dual N-Channel MOSFET
10mA JFET
|
PDF
|
jfet differential transistor
Abstract: JFET 401 U402 N CHANNEL FET
Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature
|
Original
|
LS318
250mW
500mW
LS318
jfet differential transistor
JFET 401
U402 N CHANNEL FET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current
|
Original
|
IT120A
IT120
IT121
IT122
250mW
500mW
|
PDF
|
MS24166-D1
Abstract: ms24166d1 MIL-PRF-6106 magnetic latching Contactor leach contactor 70644 MS241
Text: 7064-4653 ENGINEERING DATA SHEET CONTACTOR 1PST-DM, 50 AMP Non latching solenoid design power contactor MIL-PRF-6106 Qualified to MS24166-D1 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 50 Amps / 28 Vdc Weight 267 g max. Dimensions of case 70mm x 53.4mm x 65mm max.
|
Original
|
MIL-PRF-6106
MS24166-D1
28Vdc
906work.
MS24166-D1
ms24166d1
magnetic latching Contactor
leach contactor
70644
MS241
|
PDF
|
MS24178-D1
Abstract: MS35650-305 MS35649-265 AN96110 ARE 1312 RELAY MS35338-98 AN9616 MIL-PRF-6106 ms24178 ms2417
Text: 7064-4656 ENGINEERING DATA SHEET CONTACTOR 2PST-DM, 55 AMP Non-latching solenoid design power contactor MIL-PRF-6106 Qualified to MS24178-D1 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 55 Amps / 28 Vdc Weight 350g max. Dimensions of case 76.2mm x 68.2mm x 51.58mm
|
Original
|
MIL-PRF-6106
MS24178-D1
28Vdc
MS24178-D1
MS35650-305
MS35649-265
AN96110
ARE 1312 RELAY
MS35338-98
AN9616
ms24178
ms2417
|
PDF
|
C6320
Abstract: 620 tg diode
Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps
|
Original
|
TC6320
MS-012,
DSFP-TC6320
B051908
C6320
620 tg diode
|
PDF
|
C6320
Abstract: No abstract text available
Text: TC6320 N- and P-Channel, Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps
|
Original
|
TC6320
MS-012,
DSFP-TC6320
A030608
C6320
|
PDF
|
|
|
ms24149-d1
Abstract: MS24149-A1 9330-10374 9330-4026 Relay leach Leach Relay Reliability AN508-6-5 MS35338-98
Text: 9330 ENGINEERING DATA SHEET RELAY - NONLATCH 10 AMP, 2PDT Balanced armature relay Hermetically sealed construction Contact arrangement 2 PDT Meets the standards and requirements of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, 1 Ø
|
Original
|
MIL-PRF-6106
ms24149-d1
MS24149-A1
9330-10374
9330-4026
Relay leach
Leach Relay Reliability
AN508-6-5
MS35338-98
|
PDF
|
MS24149-D1
Abstract: 9330-10374 9330-4026 MS24149-A1 AN508-6-5 ms24149d1 MS24149
Text: 9330 ENGINEERING DATA SHEET RELAY - NONLATCH 10 AMP, 2PDT Balanced armature relay Hermetically sealed construction Contact arrangement 2 PDT Meets the standards and requirements of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, 1 Ø
|
Original
|
MIL-PRF-6106
MS24149-D1
9330-10374
9330-4026
MS24149-A1
AN508-6-5
ms24149d1
MS24149
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features ►► Integrated GATE-to-SOURCE resistor ►► Integrated GATE-to-SOURCE Zener diode ►► Low threshold ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds
|
Original
|
TC6320
TC6320
DSFP-TC6320
D011513
|
PDF
|
MS27418-2A
Abstract: MS27418-2B 9324-8214 9324-10315 MS25036-63 MS27418-1A 9324-7424 ms27418-1b MS25036 with .080 hole MS27418-1C
Text: SERIES 9324 ENGINEERING DATA SHEET RELAY - NONLATCH 25 AMP, 3 PST/NO Hermetically sealed Contact arrangement 3 PST/NO Designed to the performance standards of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac 60 Hz/400 Hz, 1 Ø
|
Original
|
MIL-PRF-6106
z/400
MS27418-2A
MS27418-2B
9324-8214
9324-10315
MS25036-63
MS27418-1A
9324-7424
ms27418-1b
MS25036 with .080 hole
MS27418-1C
|
PDF
|
e304 fet
Abstract: No abstract text available
Text: Il III 'Il VRE304 Low Cost •■■ Precision Reference THALER CORPORATION • 2015 N. FO RBES BO ULEVARD • TUCSO N, A2. 85745 • 520 882-4000 FEATURES • 4.500 V OUTPUT ± 0.450 mV (.01 %) PIN CONFIGURATION •TEM PER A TU R E DRIFT: 0.6 ppm/°C • LOW NOISE: 3yV „
|
OCR Scan
|
VRE304
1-10Hz)
VRE304
VRE304DS
e304 fet
|
PDF
|
WY smd transistor
Abstract: No abstract text available
Text: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection
|
OCR Scan
|
fl235bD5
O-22QAB/5
O-220AB/5,
E3043
Q67060-S6206-A2
E3043
Q67060-S6206-A3
O-22QAB/5,
E3062
BTS442E2
WY smd transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Û2 35b05 000153b 30b • SIEM ENS PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump • Fast demagnetization of inductive loads
|
OCR Scan
|
35b05
000153b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n
|
OCR Scan
|
flP3Sb05
6235bG5
O-218AB/5
Q67060-S6951-A2
|
PDF
|
smd transistor jst
Abstract: st smd diode VU SMD code E2 BTS442E2 E3043 E3062 E3062A Q67060-S6206-A2 Q67060-S6206-A3 WN smd transistor
Text: SIEMENS &E35L.D5 O G ^ ß O ö tô t m PROFET BTS 442 E2 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation
|
OCR Scan
|
TQ-220AB/5
Q67060-S6206-A2
O-22QAB/5,
E3043
E3043
Q67060-S6206-A3
E3062
BTS442E2
E3062A
smd transistor jst
st smd diode VU
SMD code E2
E3062A
Q67060-S6206-A2
Q67060-S6206-A3
WN smd transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • Ö E 3 S bO S D D f i m ^ b TFT S IE M E N S PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features • Load dump and reverse battery protection1 VLoad dump • Clam p of negative voltage at output V b b -V b u T Avalanche • Short-circuit protection
|
OCR Scan
|
O-22QAB/5
O-22QAB/5,
E3043
E3043
Q67060-S6202-A2
Q67060-S6202-A4
E3062
BTS432E2
E3062A
|
PDF
|
