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Abstract: No abstract text available
Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P DESCRIPTION The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications.
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ITC117P/ITC135P/ITC137P
3750VRMS
135P/ITC137P
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ZENER DIODE 0.5v
Abstract: No abstract text available
Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P DESCRIPTION The Integrated Telecom Circuit combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes on some products into one 16 pin SOIC package to consolidate design and
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ITC117P/ITC135P/ITC137P
ITC117
3750VRMS
Darlingto/ITC135P/ITC137P
ZENER DIODE 0.5v
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512-1N4750A
Abstract: 512-1N4148WS 512-BAS19 rurg3020c SOT23 reverse voltage 600v MMSD4448 BAW74 BAS16HT1G SOD-80 1000V SOT-23 187
Text: ZENER DIODES CONT. For quantities greater than listed, call for quote. For quantities greater than listed, call for quote. MOUSER STOCK NO. Mfr. Mfr. Part No. 512-1N4749AT50A 512-BZX85C24 512-1N4750A 512-1N4750ATR 512-1N4751A 512-1N4751ATR 512-BZX85C30 Package
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512-1N4749AT50A
512-BZX85C24
512-1N4750A
512-1N4750ATR
512-1N4751A
512-1N4751ATR
512-BZX85C30
DO-41
512-1N4750A
512-1N4148WS
512-BAS19
rurg3020c
SOT23 reverse voltage 600v
MMSD4448
BAW74
BAS16HT1G
SOD-80 1000V
SOT-23 187
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266CT125-3E2A
Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit
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AN-937
500ns/div
266CT125-3E2A
GBAN-PVI-1
240XT250-3EA2
HEXFET Power MOSFET designer manual
CD4093
CD4093 IC details
IRF540 complementary
ca3103
IR7509
Toroid 3E2A
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GBAN-PVI-1
Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit
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AN-937
500ns/div
GBAN-PVI-1
ca3103
266CT125-3E2A
IR7509
ic cd4093
oscillator with CD4093 Types
dc to dc chopper
zener in4148
240XT250-3EA2
IRF540 complementary
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1W ZENER DIODE
Abstract: Zener Diodes 300v 12V, 1W zener diode 1W 12V ZENER DIODE zener diode 9,1v 0.5 w zener diode chip zener diode 1n4750a
Text: 1N47xxA SERIES 1W Zener Diode .034 034 0 (0.9 9) DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~300V VF 1.2V TJ max 150°C DO-41 Dimensions in inches and (millimeters) Mechaincal Data
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1N47xxA
DO-41
DO-41
UL94V-0
MIL-STD-202,
1V-91V
1W ZENER DIODE
Zener Diodes 300v
12V, 1W zener diode
1W 12V ZENER DIODE
zener diode 9,1v 0.5 w
zener diode chip
zener diode 1n4750a
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STY60NK30Z
Abstract: Y60NK30Z Y60NK30 plasma tv circuit diagram plasma tv schematic diagram Zener Diodes 300v
Text: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STY60NK30Z
Max247
STY60NK30Z
Y60NK30Z
Y60NK30
plasma tv circuit diagram
plasma tv schematic diagram
Zener Diodes 300v
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L9NK30Z
Abstract: No abstract text available
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
L9NK30Z
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STL9NK30Z
Abstract: No abstract text available
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
STL9NK30Z
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P12NK30Z
Abstract: p12nk3 STP12NK30Z
Text: STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK30Z • ■ ■ ■ ■ ■ ■ V DSS R DS on ID (1) Pw (1) 300 V < 0.4 Ω 9A 90 W TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STP12NK30Z
O-220
O-220
P12NK30Z
p12nk3
STP12NK30Z
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Untitled
Abstract: No abstract text available
Text: STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK30Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID (1) Pw (1) 300 V < 0.4 Ω 9A 90 W TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STP12NK30Z
O-220
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Y60NK30Z
Abstract: plasma tv schematic diagram Y60NK30 STY60NK30Z
Text: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STY60NK30Z
Max247
Y60NK30Z
plasma tv schematic diagram
Y60NK30
STY60NK30Z
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zener diode 54A
Abstract: Zener Diodes 300v STW54NK30Z W54NK30Z
Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW54NK30Z
O-247
zener diode 54A
Zener Diodes 300v
STW54NK30Z
W54NK30Z
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P7NK30Z
Abstract: F7NK30Z p7nk STF7NK30Z STP7NK30Z
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A - TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
P7NK30Z
F7NK30Z
p7nk
STF7NK30Z
STP7NK30Z
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STF7NK30Z
Abstract: STP7NK30Z Part Marking TO-220 STMicroelectronics
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
STF7NK30Z
STP7NK30Z
Part Marking TO-220 STMicroelectronics
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P7NK30Z
Abstract: ZENER diode 400V 5A
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
O-220
O-220FP
P7NK30Z
ZENER diode 400V 5A
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STW54NK30Z
Abstract: No abstract text available
Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW54NK30Z
O-247
STW54NK30Z
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P7NK30Z
Abstract: p7nk F7NK30Z STP7NK30Z ZENER diode 400V 5A STF7NK30Z JESD97
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
P7NK30Z
p7nk
F7NK30Z
STP7NK30Z
ZENER diode 400V 5A
STF7NK30Z
JESD97
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E9 varistor
Abstract: 20 pin laptop lcd connector DVI RECEIVER PCB design guidelines 330ohm resistor DVI PCB design guidelines USB2.0 layout HDMI to vga mike evans CM1213-02 usb esd eye pattern
Text: AP-220 Low-Capacitance ESD protection on High-Speed Ports USB 2.0 and DVI Mike Evans, Jeff Dunnihoo, California Micro Devices June 2003 The Need for ESD Protection High speed interfaces such as USB2.0, DVI and its derivative HDMI are now being used extensively in the computer and consumer markets. The USB2.0 interface comprises one pair of
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AP-220
480Mbps,
165Mbps,
500ps
400ps)
E9 varistor
20 pin laptop lcd connector
DVI RECEIVER PCB design guidelines
330ohm resistor
DVI PCB design guidelines
USB2.0 layout
HDMI to vga
mike evans
CM1213-02
usb esd eye pattern
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2u20 diode
Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors
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1-800-232-CODI
1N6003B
1N6004B
1N6005B
1N6006B
1N6007B
1N6008B
1N6009B
1N6010B
1N6011B
2u20 diode
2U39 diode
1N4C07
IN6016
IN4688
1N4C03
1N4C02
HRG1000
1N1989B
1N218
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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DL 92 tube
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD SL2 43E J> 6137S8=1 0 Q 0 Q 1 M 2 T BSLCB T - U - Z 3 TM SERI ES S U R G E P A K Hybrid Transient Voltage Suppressor •Silicon and Gas Tube Technologies 200V and 300V ■5kA Peak Pulse Current 5kV Peak Pulse Voltage APPLICATIONS
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6137S8
DO-35
DO-35
DO-41
DO-15
DO-201AD
DL 92 tube
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4E smd diode
Abstract: Zener diode quad surface mount smd schottky diode A2 SOD-123 Schottky Diode SOT-89 smd transistor 662 composition of material used in zener diode smd transistor 662 x SMD transistor 123 CMPZDC47V CMXZ47VTO
Text: N ew To T he 2 □□< 4 E di ti on New additions to the 2004 SMD Databook The following pages outline the latest additions to this edition of the surface mount devices databook. Over 90 new devices manufactured by Central Semiconductor have been added, as well as the new material composition data section. To keep up to date on all the latest
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chMXD2004TO
CMSH1-40M
OT-89
4E smd diode
Zener diode quad surface mount
smd schottky diode A2 SOD-123
Schottky Diode SOT-89
smd transistor 662
composition of material used in zener diode
smd transistor 662 x
SMD transistor 123
CMPZDC47V
CMXZ47VTO
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DIODE SMD 10 25L
Abstract: 20L DIODE ZENER DIODE SMD 10 - 25L motorola smd diodes 1500w tvs diode SMD 20L SMD SOT-23 smc diodes motorola motorola diode smd 35v Diode zener smd 152 sot-23 st microelectronics smd zener
Text: ^ew7b .6 Edit/0 SMD DATA BOOK 1999 * • LO W V f SCHOTTKY IN SMA, SMB, SMC, DPAK CASE r e c t if ie r s With a forward voltage drop as low as .35V, these devices are well suited for battery powered, hand-held applications such as pagers, laptops, and cell phones.
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CMSH1-20ML
CMSH2-20L
CMSH3-20L
CSHD5-25L
CSHD10-45L
CZTA27
OT-223
OD-123
DIODE SMD 10 25L
20L DIODE ZENER
DIODE SMD 10 - 25L
motorola smd diodes
1500w tvs diode SMD
20L SMD SOT-23
smc diodes motorola
motorola diode smd 35v
Diode zener smd 152 sot-23
st microelectronics smd zener
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