hansmann
Abstract: HMI 575 zg 501 ignitor zg 500 pro hansmann electronic ballast electronic ballast MITRONIC eb 400/575 HMI 575 igniter pfpe60 Electronic ballast eb 400/575 Gossen
Text: Technical Information No. FO 4390 Edition: 11/04 - Metal Halide Lamp subject to change HMI 575 W/SE Supersedes: Edition 08/04 Status: valid Product description The OSRAM HMI 575 W/SE is a metal halide lamp with outer bulb. The lamp serves as a standard light source and is
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AD-825,
sAD-825;
SA-575-i2;
PFPE60
123T01E.
hansmann
HMI 575
zg 501 ignitor
zg 500 pro
hansmann electronic ballast
electronic ballast MITRONIC eb 400/575
HMI 575 igniter
Electronic ballast eb 400/575
Gossen
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Hansmann
Abstract: hansmann electronic ballast zg 500 pro Gossen HMI 575 HMI ballast* 575 electronic ballast MITRONIC IREM BALLAST 640032 zg 501 ignitor
Text: Technical Information No. FO 4931 Edition: 02/06 - Metal Halide Lamp subject to change without notice Supersedes: Edition 08/04 Status: valid HMI 575 W/SEL Product description d The OSRAM HMI 575 W/SEL is a single ended metal halide lamp with outer jacket. Service life has been extended to 1,000
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AD-825,
sAD-825;
SA-575-i2;
PFPE60
123T01E
Hansmann
hansmann electronic ballast
zg 500 pro
Gossen
HMI 575
HMI ballast* 575
electronic ballast MITRONIC
IREM BALLAST
640032
zg 501 ignitor
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transistor zg
Abstract: F689K BF689 zg transistor
Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION
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BF689K
F689K
SB034
transistor zg
BF689
zg transistor
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Untitled
Abstract: No abstract text available
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK:GH;><IF:D;B:F>H/,+L.X U2AHF6ADK<6H:8=6F<: V !08M[^Rh .) O R =L"`_#%^Rh )',.) *2 _< Q X%dia U"LHF:B:9J 9HF6H:9 U%><=E:6@8IFF:CH86E67>A>HM
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IPI50R350CP
86E67
688DF9
696EH
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SLVA058
Abstract: Mancini* CFA Mancini* SLOA zf 200 SLOA020 Mancini and/SLVA058
Text: Current Feedback Amplifier Analysis and Compensation Application Report March 2001 Mixed Signal Products SLOA021A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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SLOA021A
SLVA058
Mancini* CFA
Mancini* SLOA
zf 200
SLOA020
Mancini
and/SLVA058
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ZG-WDC41
Abstract: ZG-WDS22 CLASS II LASER 21cfr EN60825-1 ZG-RPD41 transistor zg ZS-XPT2 airbag
Text: NEW Smart Sensors ZG-series 2D Profile Measuring Sensors New Features Adjust for the angle of the measurement object. Measure up to 8 areas simultaneously. Safety Precautions for Laser Equipment WARNING Do not expose your eyes to laser radiation either directly or reflected from a mirrored
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Q150-E1-01B
ZG-WDC41
ZG-WDS22
CLASS II LASER 21cfr EN60825-1
ZG-RPD41
transistor zg
ZS-XPT2
airbag
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high resolution reflective omron
Abstract: zg 90 zinc 30 pin flex cable lcd OMRON CPU 21 omron plc ZG-WDS22 ZG-RPD41 ZG-WDC41 IEC608251
Text: NEW Smart Sensors ZG-series 2D Profile Measuring Sensors 2D Profile Measuring Sensors Ultra Wide Laser Beam & Super High-speed Measurement The Industry's First A wide laser beam captures A new Smart Sensor debuts with a light-section method 2 entire shapes with ease.
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Q150-E1-01A
high resolution reflective omron
zg 90 zinc
30 pin flex cable lcd
OMRON CPU 21
omron plc
ZG-WDS22
ZG-RPD41
ZG-WDC41
IEC608251
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ADA03
Abstract: "Capacitive Touch Sensor" capacitive sensor water level detection ir water level sensor Capacitive Touch Sense Switch project on water level control "Touch Sensor" capacitive sensor level capacitive level switch capacitive water sensor
Text: ADA03 Capacitive Touch Sensor with Self-Calibration mode Dec. 2004 Chemtronics ADA03 1-CH Capacitive Touch Sensor with Self-Calibration Mode General Description General Feature 1-Channel Capacitive Sensor with self calibration. Projects a 'touch button' through any dielectric,
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ADA03
ADA03
"Capacitive Touch Sensor"
capacitive sensor water level detection
ir water level sensor
Capacitive Touch Sense Switch
project on water level control
"Touch Sensor"
capacitive sensor level
capacitive level switch
capacitive water sensor
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HMI 575
Abstract: HMI ballast* 575 Hansmann hansmann electronic ballast sachtler netronic 575 HMI ballast efr 135 bag turgi BALLAST HMI 575 igniter electronic ballast MITRONIC
Text: Technical Information Metal Halide Lamp No. FO 4894 Edition: 11/04 - subject to change HMI 575 W/GS Supersedes: Edition 02/02 Status: valid Product description The OSRAM HMI 575 W/GS is a double-ended metal halide lamp. Due to its very short arc length GS = gap
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BE-575;
PFPE60
123T01E.
HMI 575
HMI ballast* 575
Hansmann
hansmann electronic ballast
sachtler netronic 575
HMI ballast
efr 135
bag turgi BALLAST
HMI 575 igniter
electronic ballast MITRONIC
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hansmann
Abstract: zg 200-pro sachtler netronic 575 kobold kobold 270 sachtler batronic kobold hmi 400 lm 4011 HMI 575 igniter schiederwerk 2-25
Text: Technical Information No. FO 4294 Edition: 11/04 - Metal Halide Lamp subject to change HMI 250 W/SE Supersedes: Edition 02/02 Status: valid Product description The OSRAM HMI 250 W/SE is a metal halide lamp without outer bulb. Due to its compact design and the single-ended base a high
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123T01E.
hansmann
zg 200-pro
sachtler netronic 575
kobold
kobold 270
sachtler batronic
kobold hmi 400
lm 4011
HMI 575 igniter
schiederwerk 2-25
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BZG03
Abstract: BZG03-C10 BZG03-C270 C100 C110 C120 bzg03c10
Text: N AUER PHILIPS/DISCRETE b TE D • bbSB^l 0027070 Philips Sem icon du ctors b7b M A P X Product specification Voltage regulator diodes D E S C R IP T IO N BZG03 series Q U IC K R E F E R E N C E DATA H igh relia bility glass-passivated d iode s in a sm all recta n g u la r SM D
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BZG03
DO-214AC
BZG03-C10
BZG03-C270
C100
C110
C120
bzg03c10
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PF08107B
Abstract: ecg 1720 pf08107 DCS1800 Hitachi DSA00515
Text: PF08107B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-787F Z 7th Edition Feb. 2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). • For 3.5 V nominal operation
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PF08107B
DCS1800
ADE-208-787F
DCS1800
PF08107B
ecg 1720
pf08107
Hitachi DSA00515
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BFQ22S
Abstract: transistor dc 558 npn BFQ24 transistor 6 MHz transistor bt2
Text: Product sp ecification P h ilip s S em icon d u ctors NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL D ESCRIPTION Z/7 SbE D • 711GÛ2L. BFQ22S 00453^0 114 H P H I N PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ22S
BFQ24.
7110fl2fc.
BFQ22S
transistor dc 558 npn
BFQ24
transistor 6 MHz
transistor bt2
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V01U
Abstract: chessman CT-11 by understanding its causes ferroxcube ferrite beads Engineering Design Automation Scans-0074801 Stackpole ferrite W-4403 rostek All similar transistor
Text: Prevent emit ter-follower oscillation by understanding its causes. You can minimize problems by adding an inexpensive resistor or ferrite bead. You can use graphical analysis and minor cir cuit changes to prevent oscillation in em itterfollower output stages. For most applications a
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CT-11,
V01U
chessman
CT-11 by understanding its causes
ferroxcube ferrite beads
Engineering Design Automation
Scans-0074801
Stackpole ferrite
W-4403
rostek
All similar transistor
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BFQ65
Abstract: No abstract text available
Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz
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QQ31S
BFQ65
BFQ65
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RA07M4449M
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA07M4449M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 440-490MHz 7W FM PORTABLE RADIO OUTLINE Dimensions in mm DRAWING 30 +/-0.2 6.6 + /- 0.2 2 1.2 + /- 0.2 2-R1.5 +/-0.1
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RA07M4449M
440-490MHz
25deg
50ohm
RA07M4449M
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transistor 6c9
Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A
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IPI50R350CP
696EH
transistor 6c9
transistor marking 6c9
102 6f
dk transistor
6H MARKING diode
D9 DG transistor
marking 6H
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Untitled
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING MITSUBISHI RF POWER MODULE ELETROSTATIC SENSITIVE DEVICES RA30H4449M Silicon MOS FET Power Amplifier, 440-490MHz 30W FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM ¡.0 +/-0.5 60.0 +/-0.5 3.0 51.5+/-0.5
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RA30H4449M
440-490MHz
25deg
50ohm
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PDF
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M68732SHA
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SHA Silicon MOS FET Power Amplifier, 470-520MHz 6.7W FM PORTABLE PIN: l.Pin :RF INPUT :GATE BIAS SUPPLY 3 .V D D :DRAIN BIAS SUPPLY 4 .P0 :RF OUTPUT
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M68732SHA
470-520MHz
25deg
50ohms
50ohms
M68732SHA
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PDF
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M68769H
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68769H 450-490MHZ, 12.5V, 45W FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm OH PIN: © P in :R F INPUT © V C C 1 : 1st. DC SUPPLY © V C C 2 : 2nd. DC SUPPLY @VCC3: 3rd. DC SUPPLY © P O :R F OUTPUT © G N D : FIN
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M68769H
450-490MHZ,
25deg
VccK12
M68769H
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PDF
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RA07M4449M
Abstract: F44D
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA07M4449M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 440-490MHz 7W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 30 +/- 0.2 MAXIMUM RATINGS SYMBOL V dd Vgg Pin
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RA07M4449M
440-490MHz
Zg-Zh50ohm
50ohm
RA07M4449M
F44D
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PDF
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Mancini* CFA
Abstract: ti 829 SLOD006A transistors zb
Text: Chapter 8 Current-Feedback Op Amp Analysis Literature Number SLOA080 Excerpted from Op Amps for Everyone Literature Number: SLOD006A Chapter 8 Current-Feedback Op Amp Analysis Ron Mancini 8.1 Introduction Current-feedback amplifiers CFA do not have the traditional differential amplifier input
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SLOA080
SLOD006A
Mancini* CFA
ti 829
SLOD006A
transistors zb
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transistor smd zG
Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband
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OT143
BFG17A
MSB014
OT143.
711062fci
711062b
7110A2L
transistor smd zG
npn zg
SMD Transistor zG
TRANSISTOR 610 smd
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toshiba s-au80
Abstract: S-AU80 Rf power amplifire zg 36 zg 32 zg transistor
Text: S-AU80 TOSHIBA RF Power Amplifire Module S-AU80 900 MHz Band Amplifier Applications GSM • Output Power: Po = 35.0 dBmW (typ.) • Power Gain: Gp = 35.0 dB (typ.) • Total Efficiency: ηT = 43% (typ.) Unit: mm JEDEC EIAJ TOSHIBA Maximum Ratings (Ta = 25°C)
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S-AU80
toshiba s-au80
S-AU80
Rf power amplifire
zg 36
zg 32
zg transistor
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