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Nichicon Corporation UZG0J101MCL1GB Aluminum Electrolytic Capacitors - SMD 6.3volts 100uF AEC-Q200
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Mouser Electronics	UZG0J101MCL1GB		917			1 $0.85 10 $0.544 100 $0.415 1000 $0.3 10000 $0.244	Buy Now
C&K 7205J1ZGE2 Rocker Switches Miniature Rocker & Lever Handle Switch
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Mouser Electronics	7205J1ZGE2		50			1 $29.51 10 $29.36 100 $13.81 1000 $13.81 10000 $13.81	Buy Now
C&K U21J1ZGE2 Rocker Switches
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Mouser Electronics	U21J1ZGE2		48			1 $15.25 10 $15.24 100 $12.07 1000 $11.43 10000 $11.43	Buy Now
C&K 7105J19ZGE22 Rocker Switches Rocker
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Mouser Electronics	7105J19ZGE22		42			1 $17.82 10 $17.75 100 $13.75 1000 $11.57 10000 $11.57	Buy Now
C&K 7105J10ZGE2 Rocker Switches Rocker
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Mouser Electronics	7105J10ZGE2		40			1 $17.56 10 $17.34 100 $12.3 1000 $12.3 10000 $12.3	Buy Now

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ZG J1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mark ZG Abstract: KTN2222AU Text: SEMICONDUCTOR KTN2222AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZG 1 2 Item Marking Description Device Mark ZG KTN2222AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	KTN2222AU mark ZG KTN2222AU	PDF
ZG SOT-23 Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG Text: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	KTN2222AS OT-23 ZG SOT-23 ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG	PDF
ZG-1449-18 Abstract: No abstract text available Text: ZG-1449-18 The JMK ZG-1449-18 audio amplifier is a dual channel audio amplifier capable of functioning in an automotive environment. Each channel of the amplifier is capable of both simultaneous and independent operation. The amplifier uses vehicle 12 volt power and contains all the	Original	ZG-1449-18 ZG-1449-18	PDF
J1455 Abstract: 5 volts audio amplifier vibration speaker Text: ZG-1449-18 The JMK ZG-1449-18 audio amplifier is a dual channel audio amplifier capable of functioning in an automotive environment. Each channel of the amplifier is capable of both simultaneous and independent operation. The amplifier uses vehicle 12 volt power and contains all the	Original	ZG-1449-18 ZG-1449-18 J1455 5 volts audio amplifier vibration speaker	PDF
KZQ 55 - 12 Abstract: OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12 Text: Ahgmkhe hnminm O^eZr PPO Ankk^gm + P^kbhnl bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. Nkh]n\m fZr [^ ]ZfZ`^], hk bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. {Qa^ _heehpbg` bl Zg ^qieZgZmbhg h_ ma^ lrf[hel nl^] bg ma^ hi^kZmbhg fZgnZe. + \Znmbhg:Ggcnkr hk ]Zg`^k fZr h\\nk ng]^k li^\bZe \hg]bmbhgl.	Original	CN-IC-03-0120@ KZQ 55 - 12 OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12	PDF
RD70HVF1 Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor	PDF
RD70HVF1 Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically	Original	RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet	PDF
MAR 703 MOSFET TRANSISTOR Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz	Original	RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346	PDF
RD15HVF1-101 Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF	Original	RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d	PDF
RD15HVF1 Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica	Original	RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w	PDF
RD02MVS1 Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501	PDF
RD02MUS2 Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882 Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882	PDF
RD02MUS1 Abstract: T112 transistor marking zg RD02MVS1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1	PDF
RD07MUS2B Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2	PDF

RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773	PDF
RD07MUS2B Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120	PDF
RD70HVF Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz	PDF
photodiode array 1550 nm Abstract: Photodiode Array 32 element Text: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear	OCR Scan	16-element 32-element 1550-nm J16P-40P-S01 16E-SC J16P-40P-500Ux1M 32E-SC 3030fc photodiode array 1550 nm Photodiode Array 32 element	PDF
quadrant detector hgcdte Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier Text: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y	OCR Scan	J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD UAD-8D6-R02M J16QU AD-8D6-R05M J10QUA quadrant detector hgcdte J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier	PDF
Ge APD Abstract: J16A-18A-R100U J16A avalanche photodiodes Text: J}ò E G zG J U D S O N _ Ge Avalanche Photodiodes APDs 0.8 to 1.5 um Description Multiplication Characteristics T he J16A series G erm anium A va lan ch e P hotodiodes are designed for h ig h speed applications a t 800 an d 1300 nm.	OCR Scan	1300nm, 30MHz 0DDD32fl Ge APD J16A-18A-R100U J16A avalanche photodiodes	PDF
J16-18A-R01M-HS Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a	OCR Scan	J16TE 3G30bGS 00D03Sb 3030b05 00GG3E7 J16-18A-R01M-HS J16-8SP-R05M-HS J16-18A-R01M germanium photodiode	PDF
photodiode ge Abstract: INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad Text: E G zG J U D S O N * * — — «ï fflb . V ÌV '#3é ¿.fi, ir Figure 29-2 Example of Position Linearity Figure 29-1 Position Sensor Detector Configuration - J16PS, J12PS, J10PS — '3 Î fc i l '»ti'.«' Po sitio n S en sors A Ge, InAs, or InSb position sensor	OCR Scan	J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD J16Quad 10x10 J12PS-8B12-S05M J10PS-M204-S05M photodiode ge INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad	PDF
M2340 Abstract: M23400 Text: MITSUBISHI LS Is M5M23400A-XXXP,FP,VP,RV J1 4194304-BIT 262144-WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /4194304-BIT (524288- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M o M23400A -XXXPC, FP, VP or RV)is a 4194304-bit mask-programmable high speed read-only memory.	OCR Scan	M5M23400A-XXXP 4194304-BIT 262144-WORD 16-BIT) /4194304-BIT M23400A 4194304-bit M5M23400A-XXXP( 40pin M2340 M23400	PDF
Untitled Abstract: No abstract text available Text: • bSLHflET 0017234 «ÎSfl ■ MITSUBISHI RF POWER MODULE M57776 889-915MHz, 8V, 300mW, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM —@ 1— @ Dim ensions in mm < w i-j> ii-[i © © © © © i i 77777)7777777777777 PIN : ©Pin : RF INPUT V c c i : 1st. DC SUPPLY	OCR Scan	M57776 889-915MHz, 300mW, DD17237	PDF

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ZG J1 Datasheets Context Search

mark ZG

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ZG-1449-18

J1455

KZQ 55 - 12

RD70HVF1

RD70HVF1

MAR 703 MOSFET TRANSISTOR

RD15HVF1-101

RD15HVF1

RD02MVS1

RD02MUS2

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RD07MUS2B

RD70HVF

photodiode array 1550 nm

quadrant detector hgcdte

Ge APD

J16-18A-R01M-HS

photodiode ge

M2340

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