Untitled
Abstract: No abstract text available
Text: E2L0015-17-Y1 ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and
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E2L0015-17-Y1
MSM518122
072-Word
MSM518122
072-word
256-word
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zip40
Abstract: No abstract text available
Text: ZIP40-P-475-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 3.46 TYP. 3 版/96.12.5
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ZIP40-P-475-1
zip40
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LGA 1156 PIN OUT diagram
Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)
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DIP8-P-300-2
DIP14-P-300-2
DIP16-P-300-2
DIP18-P-300-2
MIL-M-38510
MIL-STD-883
LGA 1156 PIN OUT diagram
QSJ-44403
LGA 1150 Socket PIN diagram
LGA 1155 Socket PIN diagram
IC107-26035-20-G
LGA 1151 PIN diagram
REFLOW lga socket 1155
IC107-3204-G
TB 2929 H alternative
LGA 1155 pin diagram
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MSM518121A
Abstract: No abstract text available
Text: ¡ Semiconductor ¡ Semiconductor MSM518121A This version: Jan. 1998 MSM518121A Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,
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MSM518121A
072-Word
MSM518121A
072-words
256-word
SOJ40-P-400-1
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MSM518122
Abstract: No abstract text available
Text: ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM @–Ú˘ ˘†Ò The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and
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MSM518122
072-Word
MSM518122
072-word
256-word
SOJ40-P-400-1
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425M
Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
Text: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3
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P-LFBGA144-1313-0
P-BGA256-2727-1
P-BGA352-3535-1
P-BGA420-3535-1
P-BGA560-3535-1
P-TFLGA32-0806-0
425M
DIP18
DIP20
DIP28
DIP32
DIP40
SOJ28-P-400-1
PGA wire bonding
IPGA400-C-S33U-1
PGA240
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SC3843
Abstract: SC257
Text: J2L0011-17-Y1 作成：1998年 MSM54C8651月 ● 前回作成：1997年 9月 ¡ 電子デバイス MSM54C865 65,536-Wordx8-Bit MULTIPORT DRAM n 概要
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J2L001117Y1
MSM54C865
536Word
MSM54C86564K-
2564ms
40475milZIP
ZIP40P4751
MSM54C865xxZS
40400milSOJ
SC3843
SC257
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PDF
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zip40
Abstract: 47512
Text: ZIP40-P-475-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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ZIP40-P-475-1
zip40
47512
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MSM54C865-80
Abstract: MSM54C865 MSM54C865-10 MSM54C865-70 dimensions TFSC
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM54C865
SOJ40-P-400-1
MSM54C865-80
MSM54C865
MSM54C865-10
MSM54C865-70
dimensions TFSC
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MSM518122
Abstract: SOJ40 ZIP40
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0015-17-Y1
MSM518122
MSM518122
072-Word
MSM518122128K-
5128ms
40475milZIP
ZIP40-P-475-1
27MSM518122-xxZS
40400milSOJ
SOJ40
ZIP40
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QSJ-50074
Abstract: QSJ-44403 QFJ28-P-S450-1 QSJ-44574 SSOP60-P-700-0 SSOP30-P-56-0 SOP8-P-250-1 QSJ52627 sop44-p-600-1.27-k QFJ20
Text: 7.包装 7. 包装 7-1. 包装形態 - 2 7-1-1. 通常包装 - 2 7-1-2. 防湿包装 - 3 7-2. 個装仕様 - 4
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300mil
QSJ44400
DIP8P3002
DIP14P3002
DIP16P3002
DIP18P3002
DIP20P3002
DIP22P3002
DIP8G3002
QSJ-50074
QSJ-44403
QFJ28-P-S450-1
QSJ-44574
SSOP60-P-700-0
SSOP30-P-56-0
SOP8-P-250-1
QSJ52627
sop44-p-600-1.27-k
QFJ20
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MSM518121A
Abstract: SOJ40 ZIP40 TSCC SC256
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0014-17-Y1
MSM518121A
MSM518121A
072-Word
MSM518121A128K-
5128ms
40475milZIP
40400milSOJ
ZIP40-P-475-1
27MSM518121A-xxZS
SOJ40
ZIP40
TSCC
SC256
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IC 50061
Abstract: LFBGA 50-P-400 QFP128-P-1420-0 qfp304 QFP304 tray size QSJ-44440 P-LFBGA84-0909-0 P-LFBGA224-1515-0 SOJ32-P-400-1
Text: This version: Apr. 2001 Previous version: Jun. 1997 PACKAGE INFORMATION 7. PACKING This document is Chapter 7 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 7. PACKING 7. PACKING 7.1 Packing Type 7.1.1 Ordinary Packing
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QSJ52627
Abstract: B375A QSJ-50345 040E-6 QSJ-44403 QFJ68-P-S950 1890A QSJ-52628
Text: 作成： 前回作成： 2001 年 4 月 1998 年 7 月 パッケージインフォメーション 第 7 章 包装 本文書は全 8 章にて構成されるパッケージインフォメーションドキュメントの第 7 章部分とな ります。
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300mil
QSJ-44400
DIP8-P-300-2
DIP14-P-300-2
DIP16-P-300-2
DIP18-P-300-2
DIP20-P-300-2
54-W1
54-S1
QSJ52627
B375A
QSJ-50345
040E-6
QSJ-44403
QFJ68-P-S950
1890A
QSJ-52628
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DIP24-P-600-2
Abstract: oki qfp tray SEPT24
Text: Package Overview I Type Typical Sample Semiconductor Pin Counts Pitches [mm] OKI Suffix DIP Dual-in-line Package 8, 14, 16, 18, 20, 22, 24, 28, 32, 36, 40, 42, 48 2.54 RA SDIP (Shrink Dual-in-line Package) 30, 42, 64 1.778 ZIP (Zig-Zag In-line Package) 20, 24, 28, 40
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100mil
70mil
50mil
40PQFP
DIP24-P-600-2
oki qfp tray
SEPT24
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Untitled
Abstract: No abstract text available
Text: ZIP40-P-475-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 3.46 TYP. 3/Dec. 5, 1996
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ZIP40-P-475-1
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MSM54C865
Abstract: MSM54C865-10 MSM54C865-70 MSM54C865-80
Text: E2L0011-17-Y1 ¡ Semiconductor MSM54C865 ¡ Semiconductor This version: Jan. 1998 MSM54C865 Previous version: Dec. 1996 65,536-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM54C865 is a 512Kbit CMOS multiport DRAM composed of a 65,536-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and
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E2L0011-17-Y1
MSM54C865
536-Word
MSM54C865
512Kbit
536-word
256-word
MSM54C865-10
MSM54C865-70
MSM54C865-80
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3360D
Abstract: 800A 711 TQFP64-P-1010-0 QSJ-44440 44568 DIP18 DIP20 DIP28 DIP32 SDIP30
Text: 7.包装 7. 包装 7-1. 包装形態 - 2 7-1-1. 通常包装 - 2 7-1-2. 防湿包装 - 3 7-2. 個装仕様 - 4
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300mil
400mil
350mil
3360D
800A 711
TQFP64-P-1010-0
QSJ-44440
44568
DIP18
DIP20
DIP28
DIP32
SDIP30
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MSM518122
Abstract: No abstract text available
Text: E2L0015-17-Y1 ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and
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E2L0015-17-Y1
MSM518122
072-Word
MSM518122
072-word
256-word
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PDF
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SC257
Abstract: MSM54C864 SOJ40 ZIP40 TCPN
Text: J2L0010-17-Y1 作成：1998年 1月 MSM54C864 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54C864 65,536-Wordx8-Bit MULTIPORT DRAM n 概要
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J2L0010-17-Y1
MSM54C864
MSM54C864
536-Word
MSM54C86464K-
2564ms
40475milZIP
ZIP40-P-475-1
MSM54C864-xxZS
40400milSOJ
SC257
SOJ40
ZIP40
TCPN
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msm518121
Abstract: si08
Text: O K I Semiconductor MSM518121A 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamicrandom access memory, RAM port, and a 256-word by 8-bitstatic serial access memory,
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OCR Scan
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MSM518121A
072-Word
MSM518121A
072-words
256-word
TheMSM518121
msm518121
si08
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PDF
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MSM518122
Abstract: SI05 ZIP40-P-475-1 si08
Text: O K I Semiconductor M SM 518122 131,072-W ord x 8 -B it M ultiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.
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OCR Scan
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MSM518122
072-Word
MSM518122
256-word
S0J40-P-400-1
SOJ42-P-400-1
SI05
ZIP40-P-475-1
si08
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM518122 131,072-Word x 8-B it Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.
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OCR Scan
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MSM518122
072-Word
MSM518122
256-word
b72H240
02455A
b7242H0
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si08
Abstract: No abstract text available
Text: O K I Semiconductor MSM518122 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.
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OCR Scan
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MSM518122
072-Word
MSM518122
256-word
si08
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PDF
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