cfy 19 siemens
Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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VXM05208
Q62703-F106
Q62703-F107
Q62703-F108
0Qfcj75Cn
cfy 19 siemens
cfy 14 siemens
CFY 18
siemens gaas fet
CFY 19
cfy siemens
cfy 25-20 cfy 25-17
CFY 10
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ZO 150 74
Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.
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Q62702-F788
Bas-135
fi23SbOS
D0b717b
ZO 150 74
ZO 103 MA 75 522
zo 107 MA
10MHZ
BFQ74
VCE0518I
siemens 800 169 O
zo 107
Siemens S7 400
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zo 107
Abstract: Model 260K ZO 103 SESI18
Text: 98 Engineering Services Electrical Modelling of Magnetics Our 10 phd engineers, engineers and technicians use advanced engineering tools to model, analyse and optimise the electrical characteristics of wound magnetics. Our electrical equivalent circuits are based on measurements of either a prototype or a production part and are
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CMC22
zo 107
Model 260K
ZO 103
SESI18
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transistor TT 2146
Abstract: marking R5* sc-70
Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery
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AT-32032
AT-32032
OT-323
SC-70)
MGA-81563
5989-2644EN
AV02-1963EN
transistor TT 2146
marking R5* sc-70
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ZO 107 MA 75 535
Abstract: zo 107
Text: Voltage Controlled Oscillators D u al O utput 2 5 to 1025 M Hz FREQ. MHZ MODEL NO, Coaxial POWER o mm ctttin iyp . Min. Max Main. Aux. TUNING PHASE NOISE PULLING PUSHING TUNING HARMONICS MHz MH?/V SENSITIVIIY VOLTAGE dBc/H z SSB at offset d ie v frequencies:
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ZOS-50
ZOS-75
ZOS-50
ZOS-50)
ZO 107 MA 75 535
zo 107
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NE5204AN
Abstract: NE5204A NE5204AD NE5205 SA5204AD SA5204AN zo 103 ma
Text: Philips Semiconductors RF Communications Products Product specification Wide-band high-frequency amplifier DESCRIPTION NE/SA5204A PIN CONFIGURATION The NE/SA5204A family of wideband amplifiers replaces the NE/SA5204 family. The ‘A’ parts are fabricated on a rugged 2µm
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NE/SA5204A
NE/SA5204A
NE/SA5204
200MHz.
350MHz.
NE5204AN
NE5204A
NE5204AD
NE5205
SA5204AD
SA5204AN
zo 103 ma
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ZO 103
Abstract: zo 103 ma 2 way antenna splitter, circuit diagram 100MHz high-frequency generator SA5205AD ZD 103 ma operational amplifier discrete schematic schematics power supply satellite receiver tv schematic diagram PHILIPS ZD 103
Text: INTEGRATED CIRCUITS SA5205A Wide-band high-frequency amplifier Product specification Replaces data of February 24, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5205A
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SA5205A
SA5205A
SA5205
24mAoration
ZO 103
zo 103 ma
2 way antenna splitter, circuit diagram
100MHz high-frequency generator
SA5205AD
ZD 103 ma
operational amplifier discrete schematic
schematics power supply satellite receiver
tv schematic diagram PHILIPS
ZD 103
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100MHz high-frequency generator
Abstract: NE5205AD SA5205AN NE5205AN ZD 103 ZD 103 ma SA5205AD SE5205A SE5205AN antenna amplifiers
Text: INTEGRATED CIRCUITS NE/SA/SE5205A Wide-band high-frequency amplifier Product specification RF Communications Handbook Philips Semiconductors 1992 Feb 24 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA/SE5205A DESCRIPTION
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NE/SA/SE5205A
NE/SA/SE5205A
NE/SA/SE5205
450MHz,
100MHz high-frequency generator
NE5205AD
SA5205AN
NE5205AN
ZD 103
ZD 103 ma
SA5205AD
SE5205A
SE5205AN
antenna amplifiers
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CLOCK GENERATOR 1HZ
Abstract: ICS87021AMILF ic 1hz clock generator 87021AMI
Text: ICS87021I ÷1/÷2 DIFFERENTIAL-TO-LVCMOS/LVTTL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87021I is a high perfor mance ÷1/÷2 ICS Differential-to-LVCMOS/LVTTL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High Performance Clock Solutions from IDT. The CLK,
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ICS87021I
ICS87021I
199707558G
CLOCK GENERATOR 1HZ
ICS87021AMILF
ic 1hz clock generator
87021AMI
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single ic 1hz clock generator
Abstract: 87021AMI ICS87021I
Text: ICS87021I ÷1/÷2 DIFFERENTIAL-TO-LVCMOS/LVTTL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87021I is a high perfor mance ÷1/÷2 ICS Differential-to-LVCMOS/LVTTL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High Performance Clock Solutions from IDT. The CLK,
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ICS87021I
ICS87021I
single ic 1hz clock generator
87021AMI
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ZO 103
Abstract: High-Frequency Wideband Power Transformers ZD 103 zo 103 ma ZD 103 ma operational amplifier discrete schematic tv schematic diagram PHILIPS 8505a SA5204A SA5204
Text: INTEGRATED CIRCUITS SA5204A Wide-band high-frequency amplifier Product specification Replaces data of Feb 25, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier DESCRIPTION
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SA5204A
SA5204A
SA5204
SA5205.
350MHz
ZO 103
High-Frequency Wideband Power Transformers
ZD 103
zo 103 ma
ZD 103 ma
operational amplifier discrete schematic
tv schematic diagram PHILIPS
8505a
SA5204
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Untitled
Abstract: No abstract text available
Text: ÷1/÷2 DIFFERENTIAL-TO-LVCMOS/LVTTL CLOCK GENERATOR I CS8 7 0 2 1 I GENERAL DESCRIPTION FEATURES The ICS87021I is a high perfor mance ÷1/÷2 ICS Differential-to-LVCMOS/LVTTL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High
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ICS87021I
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ECL 802
Abstract: ZO 103 capacitor 103 .01uf bourns capacitor network
Text: Features • ■ ■ ■ Optimize data transmission in ECL systems through proper termination between drivers and receivers Minimize overshoot, undershoot, and ringing while increasing noise immunity Provide decoupling capacitors ■ Minimize space and routing problems,
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4610M-802-RC/CC
Abstract: No abstract text available
Text: Features • ■ ■ ■ Optimize data transmission in ECL systems through proper termination between drivers and receivers Minimize overshoot, undershoot, and ringing while increasing noise immunity Provide decoupling capacitors ■ Minimize space and routing problems,
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NE5204AN
Abstract: ne5204 ZD 103 ma ne5205 ZD 103 NE5204AD SA5204AD SA5204AN RF1140 100MHz high-frequency generator
Text: INTEGRATED CIRCUITS NE/SA5204A Wide-band high-frequency amplifier Product specification RF Communications Handbook Philips Semiconductors 1992 Feb 25 Philips Semiconductors Product specification Wide-band high-frequency amplifier NE/SA5204A DESCRIPTION PIN CONFIGURATION
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NE/SA5204A
NE/SA5204A
NE/SA5204
NE5204AN
ne5204
ZD 103 ma
ne5205
ZD 103
NE5204AD
SA5204AD
SA5204AN
RF1140
100MHz high-frequency generator
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Transistor TT 2246
Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
Text: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:
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ATF-36163
OT-363
SC-70)
Transistor TT 2246
4747E
Gm 3842
atf 36163 Low Noise Amplifier
ATF-36163
ATF-36163-BLK
ATF-36163-TR1
HEMT marking P
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Transistor TT 2246
Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
Text: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:
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ATF-36163
OT-363
SC-70)
5965-4747E
Transistor TT 2246
4747E
TT 2246 transistor
atf 36163 Low Noise Amplifier
ATF-36163
ATF-36163-BLK
ATF-36163-TR1
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uhf vhf booster
Abstract: philips ferrite core 4b1 ferrite 4b1 OM2063 vHF amplifier module N40i
Text: Hybrid integrated VHF/UHF wideband amplifier OM2063 _ PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband am plifier in hybrid integrated circuit technology on a thin-film substrate, intended for use in m ast-head booster-am plifiers, as an am plifier in MATV systems,
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OM2063
OM2Q63
uhf vhf booster
philips ferrite core 4b1
ferrite 4b1
OM2063
vHF amplifier module
N40i
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Untitled
Abstract: No abstract text available
Text: BFR92AW NPN 5 GHz wideband transistor Rev. 03 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFR92AW
BFR92AW
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zo103
Abstract: zo103 ma ZO-103 ZO1-ZO103 xo103 zO51 ST Z0103 z0103 YO103 LH168P
Text: SHARP LH168P DESCRIPTION The LH168P is a 309-output TFT-LC D source driver IC which can simultaneously display 262 144 LH168P 309-output TFT-LCD Source Driver IC PIN CONNECTIONS 350 -PIN T C P TOP VIEW colors in 64 gray scales. FEATURES • Selectable number of LCD drive outputs : 309/300
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LH168P
LH168P
309-output
XO103,
YO103,
ZO103
ZO103,
XCh03â
zo103 ma
ZO-103
ZO1-ZO103
xo103
zO51
ST Z0103
z0103
YO103
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AT-42085
Abstract: at-42085g S21E at42085g
Text: AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many
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AT-42085
AT-42085
5965-8913EN
5989-2655EN
at-42085g
S21E
at42085g
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marking CODE GA sot363
Abstract: atf 36163 Low Noise Amplifier Transistor TT 2246 A004R ATF-36163 MGA-86563 ATF-36163-BLKG marking 34 sot-363 rf GM 2310 A SOT 363 marking code 62 low noise
Text: ATF-36163 1.5 –18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor PHEMT , in the SOT-363 (SC‑70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12
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ATF-36163
ATF-36163
OT-363
5989-1915EN
AV02-1441EN
marking CODE GA sot363
atf 36163 Low Noise Amplifier
Transistor TT 2246
A004R
MGA-86563
ATF-36163-BLKG
marking 34 sot-363 rf
GM 2310 A
SOT 363 marking code 62 low noise
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Hitachi DSA002756
Abstract: 2sc5246
Text: 2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline 2SC5246 Absolute Maximum Ratings Ta = 25°C
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2SC5246
ADE-208-264
Hitachi DSA002756
2sc5246
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor PBR941
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M3D088
PBR941
SCA60
125104/1200/05/pp16
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