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    ZW DIODE 5 Search Results

    ZW DIODE 5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZW DIODE 5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EA 9401 S DVM

    Abstract: VK-1000V5 VK-1000HV5 7 segment anzeige VK-1000 VK1000
    Text: 6.99 EA VK-1000 MINIATUR LCD DIGITAL VOLTMETER 3½ DIGIT + SYMBOLE, 5V ODER 9V Modulabmessungen: 44 x 24 x10,5 mm incl. Frontabdeckung TECHNISCHE DATEN * * * * * * * * 3½-STELLIGE KONTRASTREICHE 7 SEGMENTANZEIGE MIT 10mm ZIFFERN DEZIMALPUNKTE U. DIMENSIONSANGABEN IM DISPLAY °C, mV, µA, .


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    VK-1000 200mV, VK-1000V5 VK-1000HV5 9401-S VK-1000H VK-1000 9401-S VK-1000HV5, EA 9401 S DVM VK-1000V5 VK-1000HV5 7 segment anzeige VK1000 PDF

    White LED silicone OSRAM

    Abstract: ZW DIODE
    Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant ZW W5SG Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, farbiger diffuser Silikon - Verguss • Typischer Lichtfluss: 60 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf


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    24-mm 800/Rolle, White LED silicone OSRAM ZW DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: SKN 45 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 V22 A22 0Z22 0V22 3 V22 A22 0Z22 0V22 >BC VW¥2V >BC VW¥2A >BC VW¥0Z >BC VW¥0V =MG3 R VW G P 6:X 0A2Y ;7 R 0ZW [JT >B$ VW¥2V >B$ VW¥2A >B$ VW¥0Z >BC VW¥0V 0122 0122 >BC VW¥01


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    120h0D PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 60 DTA FBGJ FBBJK F<BJ M< N DC O F REE CTEE F PEE CUEE ;I- N PE Q$> GS DE <IO EP GS DE <IO CU CVEE CDEE GS DE <IO CD Characteristics Symbol Conditions SEMITOP 3 3-phase bridge rectifier+ series thyristor Features # $%&' * +,-./0 # 10, -)2,3 &%40*.0/


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    PDF

    VK 1760

    Abstract: V0017600 VK-1760 VK1760 VK-1763 VK 1760 H VK-1760H 1760H DA am/P55/SCKB2/RTP05/display 7 segment smd widerstand Roh
    Text: EA VK-1760/63 03/97 3½-ST. DVM 5V/9V, SUPERFLACH, MIT DIMENSIONSANGABEN Abmessungen 60 x 38 mm TECHNISCHE DATEN * * * * * * * * * * * 3½-ST. KONTRASTREICHE 7 SEGMENTANZEIGE MIT 12.7mm ZIFFERN DEZIMALPUNKTE U. DIMENSIONSANGABEN IM DISPLAY °C, mV, µA, .


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    VK-1760/63 200mV, VK-1763: 0MB-10 VK-1760H VK-1760H) VK-1760 VK-1763 VK 1760 V0017600 VK1760 VK-1763 VK 1760 H VK-1760H 1760H DA am/P55/SCKB2/RTP05/display 7 segment smd widerstand Roh PDF

    Untitled

    Abstract: No abstract text available
    Text: SK25GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$[¥ *'-) MWW T NW Y C- R ZW S$ PX Y MW Y ] PW T CU R XPO S$ XW a- C- R PO S$ NM Y C- R ZW S$ Pc Y E$[¥R P : E$0%& T$$ R NWW T^ TFL _ PW T^


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    SK25GD063 PDF

    Untitled

    Abstract: No abstract text available
    Text: SK25GH063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$[¥ IGBT Module SK25GH063 *'-) MWW T NW Y C- R ZW S$ PX Y MW Y ] PW T CU R XPO S$ XW a- C- R PO S$ NM Y C- R ZW S$ Pc Y E$[¥R P : E$0%&


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    SK25GH063 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation


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    BZX284 OD110 400mW BZX284 PDF

    CZRU52C2-HF

    Abstract: CZRU52C10-HF Z6 zener DIODE CZRU52C5v1-hf Zener diode smd marking code .18 smd marking ZC 29 DIODE SMD CODE MARKING smd code z3 diode smd marking code ZH smd marking Z6
    Text: SMD Zener Diode CZRU52C2-HF Thru CZRU52C39-HF Voltage 2 to 39 Volts Power 150 mWatts RoHS Device Halogen Free Features 0603/SOD-523F -150mW Power Dissipation. 0.071 1.80 0.063(1.60) -High Voltages from 2 ~ 39 V. -Designed for mounting on small surface. 0.039(1.00)


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    CZRU52C2-HF CZRU52C39-HF -150mW 0603/SOD-523F 0603/SOD-523F MIL-STD-750 OD-523F) QW-G2002 CZRU52C10-HF Z6 zener DIODE CZRU52C5v1-hf Zener diode smd marking code .18 smd marking ZC 29 DIODE SMD CODE MARKING smd code z3 diode smd marking code ZH smd marking Z6 PDF

    CZRUR52C10-HF

    Abstract: SMD ZENER DIODE smd zener smd zener diode code z4 Zener diode smd marking code w1 Zener diode smd marking 18 smd Product type marking code ZH smd zener code diode zener 3v6 zener diode 5v6
    Text: SMD Zener Diode CZRUR52C2-HF Thru CZRUR52C39-HF Voltage 2 to 39 Volts Power 150 mWatts RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) -150mW Power Dissipation. -High Voltages from 2 ~ 39 V. 0.039(1.00) 0.031(0.80) -Designed for mounting on small surface.


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    CZRUR52C2-HF CZRUR52C39-HF 0603/SOD-523F -150mW 0603/SOD-523F MIL-STD-750 OD-523F) QW-G2003 CZRUR52C10-HF SMD ZENER DIODE smd zener smd zener diode code z4 Zener diode smd marking code w1 Zener diode smd marking 18 smd Product type marking code ZH smd zener code diode zener 3v6 zener diode 5v6 PDF

    transistor C 2240

    Abstract: transistor 224-1 base collector emitter
    Text: ESC D • fl23SbOS Q0Q4677 2 ■SIEfi . Control Unit 25C 0487 7 ~Q . " f _ />r B ZW 20 — SIEMENS AKTIEN6ESELLSCHAF This component, a transistor with integrated base emitter resistance and a Z diode, in TO 236 case 24 A 3 DIN 41869 is designed for use as control unit in various professional and


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    fl23SbOS Q0Q4677 Q62702-Z1387 fi23Sfe transistor C 2240 transistor 224-1 base collector emitter PDF

    DIODE s2l

    Abstract: DIODE FAST S2L
    Text: K Super Fast Recovery Diode Axial Diode O U T L IN E D IM E N S IO N S S2L60 C a s e : 1 .0 ^ 600V 1.5A 26.5 ±z w zw m « +0 5 7 -o f 4.4- 26.5 i2 p -É * - 1* •» fflîŒ L L D T ! Caihodc ( I ) : Anode • trr5 0 n s • g s m s iìE ttô ffl(W ) ''C o lo r co d e (B lue)


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    S2L60 DIODE s2l DIODE FAST S2L PDF

    Diode BAW 62

    Abstract: BAW 62 SOT23 DIODE 504 BAW 43 Q62702-A471 diode fr 107 7x7x1 SOT-23 ZF
    Text: B A W 56 S iliziu m -P la n a r-D o p p e ld io d e Die epitaktische Siliziu m -P lan ar-D op peldiode B A W 56 besteht aus zw ei Einzeldioden mit gemeinsamer Anode. Die Diode im Kunststoffgehäuse 23 A 3 DIN 41 869 S O T -2 3 findet Anw endung als schneller Schalter speziell für D ünn- und D ickfilm schaltungen. Der Typ


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    OT-23) Q62702-A-471-F1 001min Diode BAW 62 BAW 62 SOT23 DIODE 504 BAW 43 Q62702-A471 diode fr 107 7x7x1 SOT-23 ZF PDF

    ZW-101PG1

    Abstract: ET 439 power module fuji LCD lg 500g monitor DUNT-5784NCZZ JW-12PM Fuse RH A4 2A 250V Fuse FGMB 250V 2A jw-13s schematic LG TV lcd backlight inverter Fuse FGMB 250V 5A
    Text: Program mable controller Wew Satellite Jw Model name JW50H/70H/100H User's Manual/Hardware version We thank you for your purchase of the SHARP programmable controller new satellite JW 50H/ 70H/100H. This booklet user's manual, hardware version explains mainly the JW 30H’s hardware; the


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    JW50H/70H/100H 70H/100H. 50H/70H/100H ZW-101PG1 ET 439 power module fuji LCD lg 500g monitor DUNT-5784NCZZ JW-12PM Fuse RH A4 2A 250V Fuse FGMB 250V 2A jw-13s schematic LG TV lcd backlight inverter Fuse FGMB 250V 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: EUPEC blE D • 3 40 32 e!? 0G011b3 5S1 H U P E C TT 60 F, TD 60 F, DT 60 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state


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    0G011b3 PDF

    Untitled

    Abstract: No abstract text available
    Text: y -f> S U tipe Saper Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC20UR 200V 8A •trr35ns h* •SRKÜ • 3 7 U — Ttv-^JU •a«- oa . « « . fa •Æ fêSi RATINGS Absolute Maximum Ratings m w m Ratings Unit Tstg -4 0 -1 5 0 “C Tj 150 °C 200


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    D8LC20UR trr35ns IGEI3444 D003445 PDF

    RV12P2000

    Abstract: iw 1688 RL12T1 RL12T15 N860 ScansU9X22 rd 1679
    Text: TELIFUNKEN W e h r m a c h tr ö h re n Ausschließlich fUr kommerzielle Verwendung — nicht im Rundfunkhandel erhältlich Z u r B e ach tu n g : Für Neuentwicklungen dürfen nur die fettgedruckten Röhrentypen Verwendung finden. Die in Kursiv­ schrift aufgeführten Röhrentypen sind nur noch in beschränkter Stückzahl für Ersatzbestückung lieferbar.


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    RV12P2000 iw 1688 RL12T1 RL12T15 N860 ScansU9X22 rd 1679 PDF

    rohre

    Abstract: MINIWATT ABB diode
    Text: Duodiode D ie erste D u odiode A B I ist ein so vollkom m en er E rfo lg gewesen, dass w ir diese T y p e auch in der neuen Serie beibehalten haben. N u r w urde die A usfüh run gsform etwas geändert, und zw ar sind je tzt beide D ioden nach unten ausgefü hrt; schaltungstechnisch ist dadurch der V o rteil ent­


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    PDF

    DIODE aaz

    Abstract: No abstract text available
    Text: U tipe Super Fast Recovery Diode S in g le D iode OUTLINE DIMENSIONS D6L20U C a s e : ITO-220 » 3.3 ±a-z 200V 6A im i Type No. a -1 |,E i} m ~T36L2QU Date code • trr3 5 n s s it a r e • T 7 JL= E — J b h' 05 îy r ô r 1.3 ±0-2 0.5 ±( ffl Ü • S R S j


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    D6L20U ITO-220 T36L2QU DIODE aaz PDF

    Untitled

    Abstract: No abstract text available
    Text: EUPEC blE D • 34G3EÌ7 G001135 bl? « U P E C TT 18 F, TD 18 F, DT 18 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state


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    34G3EÃ G001135 PDF

    CQY99

    Abstract: TFK 940 isd 1790 TFK u 116 diode tfk TFK diode TFK 925 Tfk 508
    Text: CQY99 Galliumarsenid-Lumineszenzdiode G aAs Infrared Emitting Diode Anwendung: S trahlungsquelle im nahen Infrarot-B ereich Application: Radiation source in near infrared range Besondere Merkmale: Features: 0 5 mm • Kunststoffgehäuse 0 5 mm • Plastic case


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    CQY99 100mA CQY99 TFK 940 isd 1790 TFK u 116 diode tfk TFK diode TFK 925 Tfk 508 PDF

    Untitled

    Abstract: No abstract text available
    Text: 30E • 7 * ^ 2 3 7 0031^54 1 ■ S G S - T H O M S O N G*fô mi(g¥lfMD(g§ S G 'T" ([ 2S3>'~_ BZW04-376BT S-THOMSON BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR DESCRIPTION Transient voltage suppressor diode especially use­ ful in protecting triacs. When occurs an overvoltage, the transil induces a


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    BZW04-376BT -ll-23 04-376BT PDF

    2N7221 JANTX

    Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
    Text: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


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    IRFM340 JANTXV2N7221 MIL-S-19SOO/59S] irfm340d irfm340u O-254 MIL-S-19500 I-332 2N7221 JANTX IQR 2400 2N7221 IRFM340 JANTXV2N7221 PDF

    ERR81-004

    Abstract: No abstract text available
    Text: ERR 81 3000A ^ a ,y h + —^ ' * l) 7 y 3j-—K : Outline Drawings Units mm SCHOTTKY BARRIER DIODE Features • High current • V S it flia Flat package : Applications • * * V K » « * d l* S 3 fc • Spot w elders 72±2 Plating use power supplies 5MAX.


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    err81 ERR81-004 50HzlFÃ ERR81-004 PDF