ibm usa 2001 P6 MOTHERBOARD
Abstract: 88sa8040 VT6301S SAMSUNG PLC SPC SERIES ibm usa 2001 P6 MOTHERBOARD SERVICE MANUAL PCT303A V1456VQL-P1 8050M notebook MOTHERBOARDS GMCH PIN DETAILS connector IDE TO SATA 88sa8040
Text: SERVICE MANUAL FOR 8050QMA BY: ZX Xiao Repair Technology Research Department /EDVD Jun.2005 / R01 8050QMA N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4
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8050QMA
8050QMA
915PM
ibm usa 2001 P6 MOTHERBOARD
88sa8040
VT6301S
SAMSUNG PLC SPC SERIES
ibm usa 2001 P6 MOTHERBOARD SERVICE MANUAL
PCT303A
V1456VQL-P1
8050M
notebook MOTHERBOARDS GMCH PIN DETAILS
connector IDE TO SATA 88sa8040
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Untitled
Abstract: No abstract text available
Text: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is a voltage m ode boost converter in the SOT23-6 package. Its low feedback voltage allow s the current in a chain of LEDs to be set and accurately m onitored w ith a single resistor giving m inim al losses. Its excellent load and line
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ZXSC400
ZXSC400
OT23-6
OT23-6
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Zx SOT-23
Abstract: PI5C3303 PI5C3303TEX PI5C3303TX ZX sot
Text: PI5C3303 SOTiny 2:1 Mux/DeMux Bus Switch Features Description • Near-Zero propagation delay Pericom Semiconductor’s PI5C3303 is a single 2:1 Mux/DeMux digital switch designed with a fast enable. When enabled using the Bus Enable BE pin, the “A” or “B” pin is directly connected to
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PI5C3303
PI5C3303
S0T-23
PI5C3303TX
OT-23
PI5C3303TEX
PS8367D
Zx SOT-23
PI5C3303TEX
PI5C3303TX
ZX sot
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MARK B 6PIN
Abstract: ZX sot
Text: PI5C3303 SOTINYTM 2:1 Mux/Demux Bus Switch Features Description • Near zero propagation delay Pericom Semiconductor’s PI5C series of logic circuits are produced using the Company’s advanced submicron CMOS technology, achieving industry leading speed grades.
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S0T-23
PI5C3303
PI5C3303
OT-23
PI5C3303TX
PI5C3303TEX
OT-23
PS8367D
MARK B 6PIN
ZX sot
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Untitled
Abstract: No abstract text available
Text: PI5C3303 SOTiny 2:1 Mux/DeMux Bus Switch Features Description • Near-Zero propagation delay Pericom Semiconductor’s PI5C3303 is a single 2:1 Mux/DeMux digital switch designed with a fast enable. When enabled using the Bus Enable BE pin, the “A” or “B” pin is directly connected to
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PI5C3303
PI5C3303
S0T-23
PI5C3303TX
OT-23
PI5C3303TEX
PS8367D
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Untitled
Abstract: No abstract text available
Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in
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OT23-6
-70mV
A/100mA
W24250
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Untitled
Abstract: No abstract text available
Text: ZX5T955G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T955G
OT223
-140V
OT223
5T955GTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2006E6 20V PNP LOW SAT M EDIUM POWER TRANSISTOR IN SOT23-6 SUM M ARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packag ed i n t h e SOT23-6 o u t l i n e t h i s n ew l o w saturation 20V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2006E6
OT23-6
OT23-6
A/100m
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Untitled
Abstract: No abstract text available
Text: ZX5T951G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T951G
OT223
OT223
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Untitled
Abstract: No abstract text available
Text: ZX5T853G 100V NPN LOW SAT M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T853G
OT223
OT223
5T853GTA
5T853GTC
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Untitled
Abstract: No abstract text available
Text: ZXTP2014G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
TP2014GTA
TP20852)
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Untitled
Abstract: No abstract text available
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
TP2008GTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2013G 100V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2013G
OT223
-100V
OT223
TP2013GTA
TP2013GTC
un250
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Untitled
Abstract: No abstract text available
Text: ZXTP2012G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2012G
OT223
OT223
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Untitled
Abstract: No abstract text available
Text: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T851G
OT223
OT223
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BZX84C12LT1
Abstract: BZX84C3V0L BZX84C24LT1
Text: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp = 0.9 V Max @ Ip = 10 mA for a I types) Zener Voltage Vzi (Volts) @ \zx^ - 5 mA (1) Max Reverse Leakage Current Max Zener Impedance Zener Voltage V a (Volts) @ \zT2 * ^ m A
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OT-23
lzT12
BZX84C2V4LT1
BZX84C2V7LT1
BZX84C3V0LT1
BZX84C3V3LT1
BZX84C3V6LT1
BZX84C3V9LT1
BZXB4C4V354
BZX84C12LT1
BZX84C3V0L
BZX84C24LT1
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AS273T
Abstract: astec as3842
Text: <zx/x> AS273 ASTEC Over-Temperature Detector Features Description • Programmable to three different Over-temperature thresholds The AS273 is a series of programmable over-temperature detectors. Each is internally composed of a precision 2.5 V shunt reference, a proportional-to-absolute temperature
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OT-223
AS273
AS273T
astec as3842
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1J20
Abstract: BKC Semiconductors ZX sot C47B
Text: Zener Diodes SOT-23 SMD BZX84-C2V7 thru Use Advantages BZX84-C51 These Pro Electron zener diodes use lower zener test currents popular in so many of today's battery powered applications. For use in clipping and stabilizing circuits, where local protection is needed.
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OT-23
BZX84-C2V7
BZX84-C51
DO-35
1J20
BKC Semiconductors
ZX sot
C47B
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BZXB4c
Abstract: Y2 sot23 bzx 79 6v2 SOT23 MARK Y3 bzx84c18 Z8 ITT BZX84C BZX84C24 BZX84-C27 BZX84C10
Text: 4V7 - BZX84C 33 Series BZX84C D iscrete PO W ER & S ig n a l T echnologies . National Semiconductor" BZX84C 4V7 - BZX84C 33 Series Zeners Tolerance: C = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value Units -55 to +150 + 150
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BZX84C
BZXB4c
Y2 sot23
bzx 79 6v2
SOT23 MARK Y3
bzx84c18
Z8 ITT
BZX84C24
BZX84-C27
BZX84C10
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DIODE A6
Abstract: Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE
Text: SPRflGUE DIODES « DIODES » DIODES « DIODES ♦ DIODES THE MARK OF RELIABILITY SERIES BAV and BAW MICROMINIATURE DIODES • • Series BAS, BAV, and BAW consists of standard European single and dual diode types. Devices are molded in a T 0 -2 6 3 A A high-profile or T O -2 3 6 AB (low-profile) package. These
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T0-263AA
orTO-236AB
S0T23
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C4V7
BZX84C4V7R
DIODE A6
Y6 ZENER DIODE
BZXB4C10
sprague catalog
BZX marking diode
ZENER diode Y8
Y4 ZENER DIODE
diode ZENER A8
diode ZENER Y6 marking
A6 ZENER DIODE
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1.225V MICROPOWER VOLTAGE REFERENCE
Abstract: ZXRE4041
Text: ZXRE4041 SOT23 MICROPOWER 1.225V VOLTAGE REFERENCE ISSUE 1 - MARCH 1999 DESCRIPTION T h e ZXRE4041 is a b a n d g a p c ir c u it d e s ig n e d to achieve a p re cisio n m ic ro p o w e r v o lta g e reference o f 1.225 v o lts . The d e vice is a va ila b le in th e sm all o u tlin e
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ZXRE4041
ZXRE4041
20ppm
1.225V MICROPOWER VOLTAGE REFERENCE
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ZXRE4041
Abstract: No abstract text available
Text: ZXRE4041 SOT23 MICROPOWER 1.225V VOLTAGE REFERENCE ISSUE 1 - MARCH 1999 DESCRIPTION T h e ZXRE4041 is a b a n d g a p c ir c u it d e s ig n e d to achieve a p re cisio n m ic ro p o w e r v o lta g e reference o f 1.225 v o lts. The d e vice is a va ila b le in th e sm all o u tlin e
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ZXRE4041
ZXRE4041
20ppm
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Untitled
Abstract: No abstract text available
Text: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B
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BZX84C
BZX84
5221B
5223B
5225B
5226B
5228B
5229B
5230B
Z5231B
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61N03F
Abstract: No abstract text available
Text: Section 3: MOSFETs N-Channel Devices BV'oss b elo w 40V {Preliminary Data applications when space is at a premium. Typical functions that w ill benefit from these devices include DC-DC conversion, m otor control, battery and power management and load switching.
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OT223
OT23-6
61N03F
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