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    ZXMN3A02N8TC Search Results

    ZXMN3A02N8TC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN3A02N8TC Zetex Semiconductors Original PDF

    ZXMN3A02N8TC Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ZXMN3A02N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    PDF ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC

    ZXMN3A02N8

    Abstract: ZXMN3A02N8TA ZXMN3A02N8TC
    Text: ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    PDF ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original
    PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    ZXMN3A02N8TC

    Abstract: ZXMN3A02N8 ZXMN3A02N8TA
    Text: ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    PDF ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC ZXMN3A02N8TC ZXMN3A02N8 ZXMN3A02N8TA