DSA00766799.pdf by Toshiba

Partial File Text MICROWAVE POWER GaN HEMT MICROWAVE SEMICONDUCTOR TGI7785-50L TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=40.0dBm HIGH GAIN GL=11.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATC
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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