DASF003476.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz BROAD BAND I
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