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    DSAZIHA100021874.pdf by American Microsemiconductor

    • BSP296 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)100 V(BR)GSS (V)14 I(D) Max. (A)1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s
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