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DSASL0024798.pdf
by Cree
Partial File Text
CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purp
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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CGH40006
cgh40006p
CGH40006P-TB
RO5880
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