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Scans-009430.pdf
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711002b 00137542 bl3 «PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for u.h.f.
Datasheet Type
Scan
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Obsolete
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BF966S