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Partial File Text ï»¿TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET FEATURES : â HIGH POWER PidB = 42. OdBm at 12.7 to 13.2GHz BROAD BAND INTERNALLY MATCHED B HIGH GAIN GidB = 6. OdB
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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