DSA0032513.pdf by Taiwan Semiconductor

Partial File Text TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS (on), Vgs @ 10V, Ids @ 30A = 8.5m RDS (on), Vgs @ 4.5V, Ids @ 30A = 13m Pin assignment: 1. Gate 2. Drain 3
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50a 30v 8.5m MOSFET TSM35N03 TSM35N03CP