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DSA00251479.pdf
by Freescale Semiconductor
Partial File Text
Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev. 0, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications
Datasheet Type
Original
RoHS
Yes
Pb Free
Unknown
Lifecycle
Transferred
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