DSAQ00162061.pdf by Fairchild Semiconductor

Partial File Text FDMS86200 N-Channel Power Trench® MOSFET March 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 m Features Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A Max rDS(on) = 21 m at V
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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