DSA00592897.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C) Low leakage current High sp
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Pb Free Unknown
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