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    DSAE0046265.pdf by NEC

    • MOS MOS Integrated Circuit PD444008 4M CMOS RAM 512K ×8 PD444008 4,194,304 524,288 ×8 CMOS RAM 5.0 V ± 0.5 V 36 SOJ 524,288 ×8 8, 10, 12 ns (MAX.) /OE 5.0
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