BF1205,135 datasheet
by NXP Semiconductors
- Dual N-channel dual gate MOS-FET - CIS TYP: 1.82.0 pF; COS: 0.750.85 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.2@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 107 V; Y<sub>FS</sub> min.: 26 mS; Package: SOT363 (SC-88); Container: Tape reel smd
- Original
- Yes
- Unknown
- Obsolete
- Find it at Findchips.com
