DSA00306887.pdf by Hitachi Semiconductor

Partial File Text 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features · Low on-resistance N-channel: RDS (on) 0.17 , VGS = 10 V I
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2SJ172 2SJ175 2SK1093 2SK970 6am12