DSAE007436.pdf by Infineon Technologies

Partial File Text IPB034N06N3 G Type OptiMOS(TM)3 Power-Transistor Product Summary Features V DS · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max 3.4 m ID · for sync.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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