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DSASW00192847.pdf
by Hitachi Semiconductor
Partial File Text
IGBT MODULE MBN1200E33E FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS
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Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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gate turn-off
igbt control
MBN1200E33E
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