DSAE0010510.pdf by Infineon Technologies

Partial File Text IPB180N06S4-H1 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max 1.7 m ID 180 A Features PG-TO263-7-3 · N-channel - Enhancement mode · AEC Q101
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4N06H1 IPB180N06S4-H1 PG-TO263-7-3 SMD Diode TO263-7