CVCO55BE-3245-3500
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd
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CVCO55BE-3245-3500
12-March-08
CVCO55BE-3245-3500
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15-Oct-08
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 Tuning Voltage: MHz 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing:
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Te500
15-Oct-08
CRBV55BE-3350-3500
15-Oct-08
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Untitled
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current:
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10kHz
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Storage500
15-Oct-08
CRBV55BE-3245-3500
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CVCO55BE-3245-3500
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd
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100kHz
CVCO55BE-3245-3500
12-March-08
CVCO55BE-3245-3500
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1N5825
Abstract: 2N6052 2N6058 2N6059 MSD6100
Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general–purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA
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2N6052*
2N6058
2N6059*
2N6052,
2N6059
r14525
2N6052/D
1N5825
2N6052
2N6058
2N6059
MSD6100
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2N6052G
Abstract: 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts
Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA
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2N6052
O-204AA
2N6052G
1N5825
2N6052
2N6059
MSD6100
npn transistor TO-3 5 amp 140 volts
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2n6059
Abstract: 100 amp darlington transistors 2N6058 2n6052
Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA
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2N6052*
2N6058
2N6052,
2N6059
2N6059*
100 amp darlington transistors
2n6052
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd
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10kHz
100kHz
Temperatur02)
CVCO55BE-3245-3500
18-Jul-12
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CVCO55BE-3350-3500
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing: 2.0 MHz/V
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CVCO55BE-3350-3500
12-March-08
CVCO55BE-3350-3500
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 16 VDC 3500 Tuning Voltage: MHz 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :
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CVCO55CC
CVCO55CC-3350-3500
25-Feb-08
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11-OCT
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3500 MHz 16.0 VDC 3700 MHz Tuning Voltage: 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :
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CVCO55CC
CVCO55CC-3500-3700
11-Oct-10
11-OCT
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3500 MHz 16.0 VDC 3700 MHz Tuning Voltage: 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :
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CVCO55CC
CVCO55CC-3500-3700
23-Jul-12
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing: 2.0 MHz/V
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CVCO55BE-3350-3500
23-Jul-12
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CVCO55BE-3350-3500
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing: 2.0 MHz/V
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CVCO55BE-3350-3500
12-March-08
CVCO55BE-3350-3500
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smd diode code 6N
Abstract: Q65110A9698
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA und bis zu 154 lm bei 1 A (3500 K)
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ic cx 0462
Abstract: S18DE Q65110A9698 LCWW5SM Q65110A9694
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA und bis zu 154 lm bei 1 A (3500 K)
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D-93055
ic cx 0462
S18DE
Q65110A9698
LCWW5SM
Q65110A9694
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ah128g
Abstract: No abstract text available
Text: AH128 ¼W High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +24.6 dBm P1dB • +41.5 dBm Output IP3 • 16.6 dB Gain @ 2140 MHz • 115 mA current draw • +5V Single Supply • MTTF > 100 Years • Lead-free/Green/RoHS-compliant
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AH128
AH128
OT-89
1-800-WJ1-4401
ah128g
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smd code book 9u
Abstract: Lm 373 smd transistor cy CX 0461
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA bis zu 154 lm bei 1 A (3500 K) • Besonderheit des Bauteils: hocheffiziente
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silizium Fototransistor Silicon NPN Phototransistor SFH 3500/FA SFH 3505/FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Semiconductor Group 1 1998-12-18 SFH 3500/FA SFH 3505/FA SIEMENS Wesentliche Merkmale
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3500/FA
3505/FA
FA/3505
3500/FA)
3505/FA)
PCE25
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silizium Fototransistor Silicon NPN Phototransistor SFH 3500/FA SFH 3505/FA Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Semiconductor Group 1 1998-11-12 SFH 3500/FA
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3500/FA
3505/FA
FA/3505
3500/FA)
3505/FA)
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SPX33
Abstract: transistor 7150 SPX53 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273
Text: Optically Coupled Isolators 6 Pin Dual-in-Line UL RECOGNIZED TO 3500 VAC — FILE E58979 'Type Current transfer ratio At specified forward1 current (lF) and Vce CTR(%) min. max. lF(ma) VCE(volts) Input to output isolation voltage Collector breakdown <lc = 100 ì*A)
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E58979
VCE-10V)
SPX26
SPX33
SPX53
6N138,
6N139
6N135,
6N136
transistor 7150
LC 7130
4N26 Photodiode
transistor 7550
4n33 4n35
04 transistor
transistor lf
SPX7273
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2N8050
Abstract: 2n6057 8050 npn 2n60s0 ns5 transistor Transistor Q 8050 2N6058 MOTOROLA transistor SS 8050 2n6052
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6050 Darlington Complementary Silicon Power IVansistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • High D C Current Gain — h p E = 3500 Typ @ lc = 5.0 Adc • Collector-Emitter Sustaining Voltage — @ 100 mA
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2N6050
2N6052*
2N6057
2N605Sf
2N6050,
2N6052
2N6059
2N8050
8050 npn
2n60s0
ns5 transistor
Transistor Q 8050
2N6058 MOTOROLA
transistor SS 8050
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Untitled
Abstract: No abstract text available
Text: LES DEPT 1 i 2 3 4 2 5 6 ? 8 9 10 II 12 NC JZ PARI NAME: S T O U G H T O N , MA FEMALE PART - j- § PART NO: CUSTOMER DRAWING TERMINAL NUMBER 3500H MA T E R 1AL 1 0 9 / -5 FINISH OC S T A MP 3500 H 10 9 A - 5 .016 R 15 T ± .0 0 0 5 TH ICK 83.0-66.5 BRASS
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3500H
I09A-5R)
S000076
S000042
S000002
56joAit
3500H
l09-5-REV
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Telefunken EL12
Abstract: EL12 K2XA Telefunken 1938 telefunken ra 200 telefunken ef Telefunken el 12
Text: TELEFUNKEN N e tz r ö h r e fü r W - H e iz u n g in d ir e k t g e h e iz t E n d p e n to d e Heizspannung Heizstrom Betriebswerte: EL 12 1. Uf 1, 6 ,3 1,2 Volt Am p 250 250 -7 72 8 5,5 15 30 9 0 ' 3500 4,5 8 10 0,3 Volt Volt Volt mA mA »/« mA/V kQ
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010743-a
010743-b
020743-a
020743-b
160839-a
160839-b
170839-a
170839-b
23093aa-a
Telefunken EL12
EL12
K2XA
Telefunken 1938
telefunken ra 200
telefunken ef
Telefunken el 12
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