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Microchip Technology Inc 1N5825 DIODE SCHOTTKY 40V 5A TOP HAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5825	Bulk			1	1 $51.89 10 $51.89 100 $48.1802 1000 $48.1802 10000 $48.1802	Buy Now
Arrow Electronics	1N5825		95	35 Weeks	1	1 $46.44 10 $46.44 100 $46.44 1000 $46.44 10000 $46.44	Buy Now
	1N5825		88	35 Weeks	1	1 $43.25 10 $43.25 100 $43.25 1000 $43.25 10000 $43.25	Buy Now
Verical	1N5825		88		1	1 $43.25 10 $43.25 100 $43.25 1000 $43.25 10000 $43.25	Buy Now
Avnet Americas	1N5825	Bulk		35 Weeks	100	1 - 10 - 100 $46.41164 1000 $44.92884 10000 $44.92884	Buy Now
Newark	1N5825	Bulk			100	1 - 10 - 100 $68.95 1000 $66.29 10000 $66.29	Buy Now

Mouser Electronics	1N5825		11			1 $51.12 10 $51.11 100 $47.37 1000 $47.37 10000 $47.37	Buy Now
Future Electronics	1N5825	Bulk		35 Weeks	100	1 $48.99 10 $47.73 100 $46.66 1000 $46.66 10000 $46.66	Buy Now
Microchip Technology Inc	1N5825			35 Weeks		1 $51.89 10 $51.89 100 $51.89 1000 $51.89 10000 $51.89	Buy Now
Onlinecomponents.com	1N5825					1 $54.51 10 $48.78 100 $45.08 1000 $44.4 10000 $44.4	Buy Now
NAC	1N5825	Tray			6	1 $52.96 10 $52.96 100 $48.78 1000 $45.21 10000 $45.21	Buy Now
Avnet Silica	1N5825			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	1N5825					1 $54.51 10 $48.78 100 $45.08 1000 $44.4 10000 $44.4	Buy Now
Microchip Technology Inc 1N5825E3 DIODE SCHOTTKY 40V 5A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5825E3	Bulk			100	1 - 10 - 100 $48.3503 1000 $48.3503 10000 $48.3503	Buy Now
Avnet Americas	1N5825E3	Bulk		35 Weeks	100	1 - 10 - 100 $46.56188 1000 $45.07428 10000 $45.07428	Buy Now
Newark	1N5825E3	Bulk			100	1 - 10 - 100 $69.19 1000 $66.52 10000 $66.52	Buy Now
Microchip Technology Inc	1N5825E3			35 Weeks		1 $52.06 10 $52.06 100 $52.06 1000 $52.06 10000 $52.06	Buy Now
NAC	1N5825E3	Tray			6	1 $53.13 10 $53.13 100 $48.93 1000 $45.35 10000 $45.35	Buy Now

Master Electronics	1N5825E3					1 - 10 - 100 $46.17 1000 $46.17 10000 $46.17	Buy Now
Solid State Devices Inc (SSDI) 1N5825 Diode, Schottky, 40V, Axial; Repetitive Peak Reverse Voltage:40V; Average Forward Current:5A; Diode Configuration:Single; Diode Case Style:-; No. Of Pins:2Pins; Forward Voltage Max:520Mv; Forward Surge Current:500A; Product Range:- Rohs Compliant: Yes \|Solid State 1N5825
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	1N5825	Bulk			25	1 - 10 - 100 $12.93 1000 $10.93 10000 $10.93	Buy Now
Microchip Technology Inc 1N5825e3 Schottky Diodes & Rectifiers Power Schottky
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1N5825e3					1 - 10 - 100 $52.06 1000 $52.06 10000 $52.06	Get Quote
New Jersey Semiconductor Products, Inc. 1N5825
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1N5825		715		1	1 $15.168 10 $15.168 100 $14.0001 1000 $12.4378 10000 $12.4378	Buy Now

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1N5825 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
1N5825	Motorola	Hot Carrier Power Rectifier	Original	PDF
1N5825	International Semiconductor	SCHOTTKY RECTIFIER DIODE,METAL PACKAGE	Scan	PDF
1N5825	Microsemi	5 Amp Schottky Rectifer	Scan	PDF
1N5825	Motorola	Switchmode Datasheet	Scan	PDF
1N5825	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N5825	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N5825	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
1N5825	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
1N5825	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF

1N5825 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N5825 Abstract: No abstract text available Text: 1N5825 5 Amp Schottky Rectifier 16.75 Diodes Schottky Rectifiers General Purpose Am. Page 1 of 1 Enter Your Part # Home Part Number: 1N5825 Online Store 1N5825 Diodes 5 Amp Schottky Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	PDF	1N5825 1N5825 com/1n5825
IN5825 Abstract: diode 1N5825 IN5825 diode 1N5825 1N5824 1N5823 diode 5 ampe Motorola MAV 2 1N5824 ON Text: r I 1N5823 1N5824 1N5825 HOT CARRIER . POWER SCHOTTKY ,!. ‘{,1, BARRIER .~t ~.rir. ,>.,;, RECTI FI ER&F’s:j$r .;~,.> ~~., RECTIFIERS . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometrv features epitaxial construction with oxide passivation and metal overlap contact.	Original	PDF	1N5823 1N5824 1N5825 IN5825 diode 1N5825 IN5825 diode 1N5825 1N5824 1N5823 diode 5 ampe Motorola MAV 2 1N5824 ON
MJE224 Abstract: tip111g TIP11X Text: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •	Original	PDF	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP115 TIP116 MJE224 tip111g TIP11X
to225a Abstract: to225aa TO-225AA to225 Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −	Original	PDF	MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170/180 MJE180 to225a to225aa TO-225AA to225
TO-220AB transistor package Abstract: bdw42G Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.	Original	PDF	BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package
MJD122 Abstract: TIP125-TIP127 mjd122g Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES	Original	PDF	MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g
NJVMJD31CT4G Abstract: NJVMJD31T4G Text: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com	Original	PDF	MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31 NJVMJD31CT4G NJVMJD31T4G
renco- 47 uH, L39, Renco, Through Hole Abstract: mbrd1545 LM2679-5 RL6050-22 P0847 RL-1283-22-4 LM2679 LM2679A RL-1282-47-43 5V 5A voltage regulator Text: LM2679 SIMPLE SWITCHER ® 5A Step-Down Voltage Regulator with Adjustable Current Limit General Description Features The LM2679 series of regulators are monolithic integrated circuits which provide all of the active functions for a stepdown buck switching regulator capable of driving up to 5A	Original	PDF	LM2679 renco- 47 uH, L39, Renco, Through Hole mbrd1545 LM2679-5 RL6050-22 P0847 RL-1283-22-4 LM2679A RL-1282-47-43 5V 5A voltage regulator
SB550 transistor Abstract: thermalloy heat sink 7020 capacitor electrolyte PE-53932 67144210 DOS022P-333 MURS620 Text: LM2599 LM2599 SIMPLE SWITCHER Power Converter 150 kHz 3A Step-Down Voltage Regulator, with Features Literature Number: SNVS123B LM2599 SIMPLE SWITCHER Power Converter 150 kHz 3A Step-Down Voltage Regulator, with Features General Description The LM2599 series of regulators are monolithic integrated	Original	PDF	LM2599 LM2599 SNVS123B LM25/clocks SB550 transistor thermalloy heat sink 7020 capacitor electrolyte PE-53932 67144210 DOS022P-333 MURS620
2N6488G Abstract: No abstract text available Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	Original	PDF	2N6487, 2N6488, 2N6490, 2N6491 2N6490 2N6491 O-220AB 2N6488G
mje802 Abstract: transistor mje802 MJE703G MJE702 mje800 to225 Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	PDF	MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 mje802 transistor mje802 MJE703G MJE702 to225
TO247 CASE Abstract: No abstract text available Text: MJH6284 NPN , MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287	Original	PDF	MJH6284 MJH6287 2N6284 2N6287 MJH6284/D TO247 CASE
Parallel Application LM2596 Abstract: SB550 transistor 50WQ05 Nichicon PL(M) PE-54042 LM2596 LM2599 diode 1N5825 thermalloy heat sink 7020 Text: LM2599 SIMPLE SWITCHER Power Converter 150 kHz 3A Step-Down Voltage Regulator, with Features General Description The LM2599 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with	Original	PDF	LM2599 LM2599 LM2596 Parallel Application LM2596 SB550 transistor 50WQ05 Nichicon PL(M) PE-54042 LM2596 diode 1N5825 thermalloy heat sink 7020
Untitled Abstract: No abstract text available Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA	Original	PDF	MJD210 500mA QW-R213-001

MJD122T4G Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
1N5825 Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.	OCR Scan	PDF	1N5823 1N5824 1N5825 1N5825 diode 1N5825 N5824 1n6823 marking Bq sot23 1N5824 ON
Untitled Abstract: No abstract text available Text: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5823 thru 1N5825 SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 TO 40 Volts CURRENT - 5.0 Ampere FEATURES MECHANICAL DATA • High R eliability C ase: W elded, herm etically sealed C o n stru ctio n ■ S chottky B arrier Junction	OCR Scan	PDF	1N5823 1N5825 T0DD37Ã
MDA2501 Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1 Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090	OCR Scan	PDF	1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
IN5823 Abstract: 1N5823 Text: IN 5823, 1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N S 8 2 3 a n d 1 N 5 8 2 5 a re M o to r o la P r e fe r re d D e v ic e s Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Pow er R ectifiers 5 AMPERE 2 0 . 3 0 , 4 0 VO LTS . . . e m p loying the S cho ttky B a rrie r p rin cip le in a large a rea m e tal-to-silico n p o w e r diode.	OCR Scan	PDF	1N5824 1N5825 IN5823 1N5823
1n5824 Abstract: No abstract text available Text: 5 Amp Schottky Rectifier 1N5823. 1N5824. 1N5825 Dim. Inches Minimum A B C D E M illim eter Maximum Minimum -.980 -.046 - Maximum Notes .450 _ 11.43 — 24.89 — .300 .056 .350 — 1.17 — 7.62 1.42 8.89 Dia. Dia. Dia. -II- D Microsemi	OCR Scan	PDF	1N5823. 1N5824. 1N5825 1N5823 1N5824 1n5824
1N5824 Abstract: MBR5825 1N5825 5825H in5823 n5823 Text: MOTOROLA SC DIODES/OPTO b4E D b3b?255 000b2b3 757 • NOT? IN 5823, 1N5824 1N5825 MBR5825,H,H1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5825 is a Motorola Preferred Device D e s ig n e r 's D a t a S h e e t SCHOTTKY BARRIER RECTIFIERS H O T C A R R IE R PO W ER R E C T IF IE R S	OCR Scan	PDF	000b2b3 1N5824 1N5825 MBR5825 5825H MBR5825 in5823 n5823
1N5825 Abstract: 1N5824 1N5823 TE 2161 380v Text: 5 Amp Schottky Rectifier 1N5823, 1N5824, 1N5825 Dim. Inches Minimum A B C D E Microsemi Catalog Number Working Repetitive Peak Reverse Voltage Peak Reverse Voltage 20V 30V 40V 20V 30V 40V 1N5823 1N5824 1N5825 E le c tr ic a l Average forward current Maximum surge current	OCR Scan	PDF	1N5823, 1N5825 1N5823 1N5824 1N5825 TE 2161 380v
1N5824 Abstract: 1N5825 1N5823 N5823 Text: 5 Amp Schottky Rectifier N5823, 1N5824. 1N5825 Dim. Inches Minimum A B C D E Microsemi Catalog Number Working Peak Reverse Voltage Repetitive Peak Reverse Voltage 20V 30V 40V 20V 30V 40V 1N5823 1N5824 1N5825 M illim eter Maximum Minimum -.980 -.046	OCR Scan	PDF	N5823, 1N5824. 1N5825 1N5823 1N5824 1N5825 N5823
in5823 Abstract: 1N5823 MBR5825H 1N5824 ON MBR5825 1N5824 Text: <8> IN5823, 1N5824 1N5825 MBR5825H, HI MOTOROLA D esigners Data Sheet S C H O T T K Y B A R R IE R R E C T I F IE R S HOT CARRIER POWER RECTIFIERS . e m p lo y in g th e S c h o ttk y B a rrie r p r in c ip le in a la rg e a re a m e ta lto -s ilic o n p o w e r d io d e . S ta te -o f- th e -a rt g e o m e try fe a tu re s e p ita x ia l	OCR Scan	PDF	IN5823, 1N5824 1N5825 MBR5825H, in5823 1N5823 MBR5825H 1N5824 ON MBR5825

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1N5825 Price and Stock

Microchip Technology Inc 1N5825

Microchip Technology Inc 1N5825E3

Solid State Devices Inc (SSDI) 1N5825

Microchip Technology Inc 1N5825e3

New Jersey Semiconductor Products, Inc. 1N5825

1N5825 Datasheets (9)

1N5825 Datasheets Context Search

1N5825

IN5825

MJE224

to225a

TO-220AB transistor package

MJD122

NJVMJD31CT4G

renco- 47 uH, L39, Renco, Through Hole

SB550 transistor

2N6488G

mje802

TO247 CASE

Parallel Application LM2596

Untitled

MJD122T4G

1N5825

Untitled

MDA2501

IN5823

1n5824

1N5824

1N5825

1N5824

in5823