.35 MICRON GATE ARRAY Search Results

.35 MICRON GATE ARRAY Result Highlights (5)

Part	Manufacturer	Description
DFE2016CKA-1R0M=P2	Murata Manufacturing Co Ltd	Fixed IND 1uH 1800mA NONAUTO
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
LQW18CN55NJ0HD	Murata Manufacturing Co Ltd	Fixed IND 55nH 1500mA POWRTRN

.35 MICRON GATE ARRAY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TC140G44 Abstract: TC140G27 toshiba tc140g Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to	OCR Scan	TC140G MAS-0097/3-90 TC140G44 TC140G27 toshiba tc140g	PDF
nec d 588 Abstract: nec naming rule nec product naming rule NEC CMOS-4 Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required	OCR Scan	35-MICRON 66MHz nec d 588 nec naming rule nec product naming rule NEC CMOS-4	PDF
Untitled Abstract: No abstract text available Text: Preliminary IIIÌMÌIII AffHSl September 1989 OPEN ASIC DATASHEET MAF GATE ARRAY SERIES 1.2 MICRON CMOS FEATURES . . . . . . HIGH LOAD DRIVE CAPABILITY EXCEEDING 35 mA • GATE COUNTS : 250 AND 800 . WIDE PACKAGE RANGE . EXCELLENT FOR FUSE PROGRAMMABLE ARRAYS AND BIPOLAR LOGIC REPLACE	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.	OCR Scan	1C120G TC120G MA01803 MAS-0053/6-89	PDF
toshiba tc110g Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0 Text: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high	OCR Scan	1C120G TC120G Suite205 CA92680 MA01803 5555Triangle MAS-0053/6-89 toshiba tc110g CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0	PDF
T157WG Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE Text: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and	OCR Scan	GG01522 SLA10000 SSC5000 B8259 B8237 B82284 B8255 T157WG S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE	PDF
DIGITAL GATE EMULATOR USING 8085 Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S	OCR Scan	AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent	PDF
TSGB01 Abstract: TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080 Text: ASIC PRODUCTS THOMSON MIL ET SPATIAUX TMS offers a wide range of ASIC's products, BIPOLAR, MOS, LINEAR, DIGITAL GATE ARRAYS, STANDARD CELLS, FULL CUSTOM. All ASIC’s products are available with the following screening / quality classes: - Military temperature ra n g e ;	OCR Scan	00DDD3B 30x30 TSGB01 TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080	PDF
Thomson ceramic capacitor Abstract: TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC Text: THOMSON MIL ET SPATIAUX SSE 1> • S02bfl7S DDDÜSÜ7 ^23 ■ THCM T^Hà- ASIC PRODUCTS TMS offers a wide range of ASIC's products : bipolar, MOS, BICMOS, linear, digital, gate arrays, standard cells, full custom. All — — — ASIC's products are available with the following screening levels :	OCR Scan	00D0SQ7 Thomson ceramic capacitor TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC	PDF
6 input or gate Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic Text: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K	OCR Scan	SLA8000 SLA8000 SLA827S SLA837S SLA847S SLA860S SLA872S SLA890S SLA86ES 6 input or gate t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic	PDF
bb 9790 schematic diagram Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8\|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one	OCR Scan	32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S	PDF
Untitled Abstract: No abstract text available Text: SYSTEMS SLA8000 Series June 1988 VERY HIGH SPEED CHANNELLESS CMOS GATE ARRAYS D escription The SLA8000 Series consists of a group of seven very high-speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron sili	OCR Scan	SLA8000 SLA827S	PDF
tc140g Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18 Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.	OCR Scan	TC140G 167th MAS-0097/3-92 TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18	PDF
S-MOS navnet Abstract: S-MOS asic B16c F1841 Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel	OCR Scan	SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841	PDF

B8228 Abstract: No abstract text available Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8	OCR Scan	SLA10000 SLA10000 B8228	PDF
Untitled Abstract: No abstract text available Text: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um	OCR Scan	410x410	PDF
TC170G35 Abstract: No abstract text available Text: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 \|im, 5V TC170G allows higher system perfor mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate	OCR Scan	TC170G 260ps TC160G T0T7247 IS09000. TC170G35	PDF
TTL 7466 Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY Text: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs	OCR Scan	SLA9000PIUS SLA9000Plus F240-16 TTL 7466 B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY	PDF
low power and area efficient carry select adder v Abstract: IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom Text: MVA60000 MVA60000 Series 1.4 Micron CMOS MEGACELL ASICs DS5499 ISSUE 3.1 March 1991 GENERAL DESCRIPTION Very large scale integrated circuits, requiring large RAM and ROM blocks, often do not suit even high complexity gate arrays, such as Zarlink Semiconductors' CLA60000 series.	Original	MVA60000 MVA60000 DS5499 CLA60000 low power and area efficient carry select adder v IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom	PDF
9C0000 Abstract: No abstract text available Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code	Original	128Mb: 115ns 135ns 128KB 09005aef8447d46d/Source: 09005aef845b5c96 9C0000	PDF
Untitled Abstract: No abstract text available Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code	Original	128Mb: 115ns 135ns 128KB blocks-0006, 09005aef8447d46d/Source: 09005aef845b5c96	PDF
9C0000 Abstract: No abstract text available Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code	Original	128Mb: 115ns 135ns 128KB 09005aef8447d46d/Source: 09005aef845b5c96 9C0000	PDF
HA 1370 schematics Abstract: CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND Text: PRELIMINARY Semiconductor December 1990 NGM Series ABiC BiCMOS/ECL Gate Arrays General Description Features The NGM Series is a new family of mixed ECL and BiCMOS gale arrays based on National’s revolutionary 0.8 micron drawn ABiC BiCMOS process. The NGM Series is the first	OCR Scan	TL/U/10861-4 HA 1370 schematics CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND	PDF
TC170G35 Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16 Text: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate	OCR Scan	TC170G 5VTC170G 260ps TC160G TC170G35 TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16	PDF

.35 MICRON GATE ARRAY Search Results

.35 MICRON GATE ARRAY Result Highlights (5)

.35 MICRON GATE ARRAY Datasheets Context Search

TC140G44

nec d 588

Untitled

Untitled

toshiba tc110g

T157WG

DIGITAL GATE EMULATOR USING 8085

TSGB01

Thomson ceramic capacitor

6 input or gate

bb 9790 schematic diagram

Untitled

tc140g

S-MOS navnet

B8228

Untitled

TC170G35

TTL 7466

low power and area efficient carry select adder v

9C0000

Untitled

9C0000

HA 1370 schematics

TC170G35