K3407
Abstract: No abstract text available
Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
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2SK3407
K3407
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CRS04
Abstract: DSA00206566
Text: CRS04 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS04 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm • Forward voltage: VFM = 0.49 V max · Average forward current: IF (AV) = 1.0 A · Repetitive peak reverse voltage: VRRM = 40 V
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CRS04
150transportation
CRS04
DSA00206566
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2SK246
Abstract: TOSHIBA 2SK246 2SK2463
Text: 2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm • High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK246
2SK246
TOSHIBA 2SK246
2SK2463
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2SK880
Abstract: No abstract text available
Text: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)
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2SK880
2SK880
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2SC5065
Abstract: 150-1 MARKING toshiba 133
Text: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC5065
2SC5065
150-1
MARKING toshiba 133
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Untitled
Abstract: No abstract text available
Text: S−AU68L TOSHIBA RF POWER AMPLIFIER MODULE S−AU68L UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12
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AU68L
000707EAA1
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Untitled
Abstract: No abstract text available
Text: TLP759 IGM TENTATIVE TOSHIBA Photocoupler GaAℓAs Ired + Photo IC TLP759(IGM) Transistor Invertor Inverter For Air Conditioner Line Receiver IPM Interfaces Unit in mm The TOSHIBA TLP759(IGM) consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diodetransistor.
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TLP759
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Untitled
Abstract: No abstract text available
Text: S−AV17 TOSHIBA RF POWER AMPLIFIER MODULE S−AV17 VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC 16 V DC Supply Voltage VCON 16 V Total Current IT 14 A
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400mW
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Untitled
Abstract: No abstract text available
Text: TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type π−MOSVI/U−MOSII TPC8402 Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications l l l l Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)
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TPC8402
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Untitled
Abstract: No abstract text available
Text: CMS11 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS11 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.37 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS11
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Untitled
Abstract: No abstract text available
Text: TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPC8014 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.)
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TPC8014
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Untitled
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
10S2C
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Untitled
Abstract: No abstract text available
Text: CRS08 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS08 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm • Forward voltage: VFM = 0.36 V max · Average forward current: IF (AV) = 1.5 A · Repetitive peak reverse voltage: VRRM = 30 V
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CRS08
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Untitled
Abstract: No abstract text available
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation
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2SK2855
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Untitled
Abstract: No abstract text available
Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)
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GT10J303
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Untitled
Abstract: No abstract text available
Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)
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TPC8209
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S6744
Abstract: No abstract text available
Text: S6744 TOSHIBA THYRISTOR SILICON PLANAR TYPE S6744 MEDIUM POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400V Repetitive Peak Reverse Voltage : VRRM = 400V l Average On−State Current : IT AV = 8A l A Large Current Pulse Capability
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S6744
S6744
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Untitled
Abstract: No abstract text available
Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)
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GT40T101
2-21F2C
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MP4210
Abstract: No abstract text available
Text: MP4210 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type L2-π-MOSV 4 in 1 MP4210 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4 V gate drive available
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MP4210
MP4210
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marking FB
Abstract: JDV2S02E
Text: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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JDV2S02E
000707EAA1
marking FB
JDV2S02E
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TORX111
Abstract: TOTX111 tofc100 TOTX1
Text: TORX111 FIBER OPTIC RECEIVING MODULE TORX111 FIBER OPTIC RECEIVING MODULE FOR APF Unit: mm Non−connector connector less type Data rate: DC to 6 Mb / s (NRZ code) Transmission distance: Up to 10 m (With TOTX111) TTL interface 1. Maximum Ratings (Ta = 25°C)
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ORX111
OTX111)
TORX111
TOTX111
tofc100
TOTX1
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S6992
Abstract: No abstract text available
Text: S6992 TOSHIBA Thyristor Silicon Planar Type S6992 Condenser Discharge Control Applications • Critical rate of rise of ON-state current: di/dt = 750 A/µs • Repetitive surge ON-state current: ITRM = 500 A tw = 2 µs • Repetitive peak OFF-state voltage: VDRM = 800 V
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S6992
S6992
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MG100Q1ZS50
Abstract: No abstract text available
Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode
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MG100Q1ZS50
2-95A6A
MG100Q1ZS50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)
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2SJ567
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