BPY62
Abstract: Phototransistor to-18 glass lens phototransistor
Text: SIEMENS AKTIENGESEL LSCH AF 47E D flS3SbGS 002750b S « S I E Û SIEM ENS BPY62 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm m 018 I0 45) — ,6 a 217 (5 5) 211 (5 35) 0 1 (2 54) 187 \ (4 75) Max \ \ Radiant Sensitive Area Maximum Ratings Operating and Storage Temperature (T ^ , T^ .
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002750b
BPY62
Phototransistor to-18
glass lens phototransistor
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S t M I C O IN Ü L C T _ TARGET SPECIFICATION < R s VP7615 COLOUR DIGITAL VIDEO CAMERA DECODER IC The VP7615 ¡CamHost Processor chip can decode the signals from a variety of ¡Vision™ compatible d igital video
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VP7615
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Untitled
Abstract: No abstract text available
Text: In tegrated D e vice T e ch n o lo g y , Inc. CMOS Triple Bus SyncFIFOT With Bus-Matching 256x36x2, 512x36x2, 1024x36x2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: The errata notice on the last page describes corrections that have already been added to this document.
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256x36x2,
512x36x2,
1024x36x2
IDT723626
IDT723636
IDT723646
IDT723626-256
IDT723636-512
IDT723646-1024
36-bit
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing
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BC107
BC108
BC109
BC107
bb53c
DDS7S03
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M37720S1AFP 16-BIT CMOS MICROCOMPUTER M37720S1FP is unified into M37720S1AFP. DESCRIPTION • The M37720S1AFP is a 1 6 -b it m icro com p uter de sig ned • UART m ay also be syn ch ro n o u s . 2
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M37720S1AFP
16-BIT
M37720S1FP
M37720S1AFP.
M37720S1AFP
100-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W08F/FU Dual 2-Input AND Gate The TC7W08 is a high speed C2MOS 2-Input AND Gate fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.
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TC7W08F/FU
TC7W08
D27SDc
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs TARGET SPEC REV. 0.4 M5M4V16169TP-10,-12,-15,-20 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BlT) SRAM P re lim in a ry This document is a preliminary Target Spec, and some of the contents are subject to change without notice.
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M5M4V16169TP-10
16MCDRAM
1024K-WQRD
16-BIT)
1024-WORD
16-BlT)
M5M4V16169TP
16M-bit
576-word
16-bit
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S82V
Abstract: No abstract text available
Text: E2L0056-28-91 O K I S em iconductor M S82V16 5 2 0 262,144-Word x 32-Bit x 2 -B a n k Synch ro nous G raph ics R A M D E S C R IP T IO N The MS82V16520 is a synchronous graphics random access memory organized as 256 K w ords x 32 bits x 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column
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E2L0056-28-91
S82V16
144-Word
32-Bit
MS82V16520
b72424D
MS82V16520
002750b
S82V
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bc1078
Abstract: bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 BC109 BC107 Transistor BC107 7z08 BC109 characteristic
Text: I I N AUER P H I L I P S / D I S C R E T E b'lE » • bfc.SB'iai □DS7Mtm 733 M A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. The BC107 is primarily intended for use in driver stages of audio amplifiers and in signal processing
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BC107
BC108
BC109
BC109
7Z08551
bc1078
bc107 curves
Characteristic curve BC107
Transistor BC1078
audio BC108
Transistor BC107
7z08
BC109 characteristic
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