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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551402T-20/25/30 4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode x1/x4 is


    OCR Scan     		PDF TC551402T-20/25/30 TC551402J B-150 T0T724fl 002b437

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE tiTE D • APX bbS3^31 D02b43b 144 BB910 VHF VARIABLE CAPACITANCE DIODE The BB910 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 MHz in all-band tuners.


    OCR Scan     		PDF D02b43b BB910 BB910 OD-68.

    BB910

    Abstract: No abstract text available
    Text: bTE 5 N AMER P H I L I P S / D I S C R E T E • bb 5 3 ^ 3 1 I DDEtj43b 144 BB910 VHF VARIABLE CAPACITANCE DIODE The BB 910 is a V H F variable capacitance d iode in planar te chnology w ith a very high capacitance ra tio intended fo r V H F -ba n d B u p to 4 6 0 M Hz in all-band tuners.


    OCR Scan     		PDF DDEtj43b BB910 BB910 OD-68. 55-max