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BUK436-100A Abstract: BUK436-100B Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B	PDF

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BUK436-100A

Abstract: BUK436-100B
Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B

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