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    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


    OCR Scan     		PDF OT227B BUK617-500AE/BE BUK617 0030fib4 1E-02