2N7002BKW
Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
771-2N7002BKW115
2N7002BKW
2n7002bk
TRANSISTOR SMD MARKING CODE 50
006-AA
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Untitled
Abstract: No abstract text available
Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002CK
O-236AB)
2N7002CK
771-2N7002CK215
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2N7002BKT
Abstract: marking code Z3
Text: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKT
OT416
SC-75)
AEC-Q101
771-2N7002BKT115
2N7002BKT
marking code Z3
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Untitled
Abstract: No abstract text available
Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002BK
O-236AB)
AEC-Q101
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SC-75
Abstract: No abstract text available
Text: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKT
OT416
SC-75)
AEC-Q101
SC-75
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2N7002BK
Abstract: smd code marking WV
Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002BK
O-236AB)
AEC-Q101
2N7002BK
smd code marking WV
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PDF
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smd transistor marking z8
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
smd transistor marking z8
MOSFET TRANSISTOR SMD MARKING CODE A1
2N7002BKM
SC-101
transistor smd code marking nc
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MARKING SMD x9
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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Original
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2N7002BKW
OT323
SC-70)
AEC-Q101
MARKING SMD x9
MOSFET TRANSISTOR SMD MARKING CODE A1
smd code marking WV
2n7002bkw
transistor smd code marking nc
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PEMD18
Abstract: No abstract text available
Text: Small, efficient, and robust solutions for digital still cameras NXP discretes for power management, interface, and general-purpose applications NXP discretes for digital still cameras Digital still cameras DSCs are demanding designs. They are portable, battery-powered systems, so they require
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SC-101
OT886
OT891
PEMD18
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Untitled
Abstract: No abstract text available
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
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2N7002C
Abstract: 2N7002CK MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV SMD mosfet MARKING code TJ 017aaa000
Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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Original
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2N7002CK
O-236AB)
2N7002CK
2N7002C
MOSFET TRANSISTOR SMD MARKING CODE A1
smd code marking WV
SMD mosfet MARKING code TJ
017aaa000
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2N7002BK
Abstract: 771-2N7002BK215 trench relay
Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002BK
O-236AB)
AEC-Q101
771-2N7002BK215
2N7002BK
trench relay
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smd transistor marking z8
Abstract: 771-2N7002BKM315
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
771-2N7002BKM315
2N7002BKM
smd transistor marking z8
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKT
OT416
SC-75)
AEC-Q101
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