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    Untitled

    Abstract: No abstract text available
    Text: VLMY3214 Vishay Semiconductors Power SMD LED in PLCC-4 Package FEATURES • Utilizing AlInGaP technology OMA* • Angle of half intensity ± ϕ = 60° • Available in 8 mm tape e3 • Luminous intensity and color categorized per packing unit • Luminous intensity ratio per packing unit


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    PDF VLMY3214 JESD22-A114-B VLMY3214 08-Apr-05

    AN609

    Abstract: Si4368DY
    Text: Si4368DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4368DY AN609 02-Mar-06

    Untitled

    Abstract: No abstract text available
    Text: DC-DC xppower.com • Single Output • SIP Package • DIP Package • 1000 VDC Isolation • Optional 3000 VDC Isolation • Short Circuit Protection • -40 ºC to +85 ºC Operation Specification Input Voltage 3 Input Input Voltage Range Input Current (no load)


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    PDF 02-Mar-06

    2648

    Abstract: 3271 AN609 Si4392ADY
    Text: Si4392ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4392ADY AN609 02-Mar-06 2648 3271

    475224

    Abstract: 6803 AN609 92360 75574n
    Text: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4814BDY AN609 02-Mar-06 475224 6803 92360 75574n

    Untitled

    Abstract: No abstract text available
    Text: TSOP341.ST1F Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341.ST1F - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.


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    PDF TSOP341. 08-Apr-05

    TSOP341

    Abstract: TSOP34136ST1F
    Text: TSOP341.ST1F Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341.ST1F - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.


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    PDF TSOP341. D-74025 02-Mar-06 TSOP341 TSOP34136ST1F

    Digital Weighing Scale schematic

    Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
    Text: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0086-0802 Digital Weighing Scale schematic tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411

    AN609

    Abstract: Si4394DY 7382-1
    Text: Si4394DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4394DY AN609 02-Mar-06 7382-1

    Tedea-Huntleigh

    Abstract: vishay vt 300 wiring schematic Tedea-Huntleigh 615 TEDEA model 616 Tedea-Huntleigh BY Tedea-Huntleigh BE T4 621
    Text: Models 615 and 616 Vishay Tedea-Huntleigh Tension Compression Load Cells FEATURES • Capacities 50 - 1000kg • Nickel plated alloy steel 615 or stainless steel (616) construction • IP67 protection • For use in tension or compression • 6 wire (sense) circuit


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    PDF 1000kg 08-Apr-05 Tedea-Huntleigh vishay vt 300 wiring schematic Tedea-Huntleigh 615 TEDEA model 616 Tedea-Huntleigh BY Tedea-Huntleigh BE T4 621

    2SA1036K

    Abstract: 2SC1623 2SC1623 sot-23 l6 sot23
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA


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    PDF 2SC1623 OT-23 02-Aug-06 02-Mar-06 OT-23 2SA1036K 2SC1623 2SC1623 sot-23 l6 sot23

    ku vsat amplifier

    Abstract: CMM1431-SM CMM1434-SM PB-CMM1434-SM
    Text: 13.50-14.50 GHz 2.5-Watt Power Amplifier March 2006 - Rev 02-Mar-06 CMM1434-SM Features 34.5 dBm Typ. Saturated Output Power 31.0 dB (Typ.) Linear Gain Fully Matched Uncondtionally Stable Low-Cost, Surface Mount Package Optimum Thermal Dissipation Applications


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    PDF 02-Mar-06 CMM1434-SM CMM1434-SM CMM1431-SM 1431-S PB-CMM1434-SM ku vsat amplifier CMM1431-SM PB-CMM1434-SM

    2SA1036KR

    Abstract: 2SA1036K 2SA1036KQ 2SA1036KP
    Text: 2SA1036K PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -32 V Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -500*


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    PDF 2SA1036K OT-23 2SA1036KP 2SA1036KQ 2SA1036KR 02-Mar-06 OT-23 2SA1036K

    VLMY3214

    Abstract: VLMY3214-GS18 CECC00802 JESD22-A113 J-STD-020B
    Text: VLMY3214 Vishay Semiconductors Power SMD LED in PLCC-4 Package FEATURES • Utilizing AlInGaP technology OMA* • Angle of half intensity ± ϕ = 60° • Available in 8 mm tape e3 • Luminous intensity and color categorized per packing unit • Luminous intensity ratio per packing unit


    Original
    PDF VLMY3214 JESD22-A114-B VLMY3214 D-74025 02-Mar-06 VLMY3214-GS18 CECC00802 JESD22-A113 J-STD-020B

    AN609

    Abstract: Si4336DY
    Text: Si4336DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4336DY AN609 02-Mar-06

    AN609

    Abstract: Si4842DY
    Text: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4842DY AN609 02-Mar-06

    CT1-20

    Abstract: AN609 Si4378DY 73820
    Text: Si4378DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4378DY AN609 02-Mar-06 CT1-20 73820

    4437

    Abstract: AN609 Si1410EDH
    Text: Si1410EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si1410EDH AN609 02-Mar-06 4437

    7361

    Abstract: AN609 Si4866DY
    Text: Si4866DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4866DY AN609 02-Mar-06 7361

    CT1-20

    Abstract: AN609 Si4405DY
    Text: Si4405DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4405DY AN609 02-Mar-06 CT1-20

    Untitled

    Abstract: No abstract text available
    Text: 8 THIS DRAWING IS UNPUBLISHED. ART VW COPYRIGHT - 6 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 2 3 4 - LOC AD ALL RIGHTS RESERVED. REVISIONS DIST 00 P LTR A DESCRIPTION DATE DWN 02MAR2006 ECO — 06 —004480 APVD RB JG G REF t| 0 A1 0 0^


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    V7-1K24E9

    Abstract: No abstract text available
    Text: JG-41241 330 60 t .40 i * •" . 16 5 O t t 2X FO RC E DIFFERENTIAL 225 GRAMS MA X - 2 0 GRAMS MIN .010 MA X TRAVEL O V E R T R A V E L -FREE P O S I T I O N - RELEASE 2 3 4 207406 00 1 8 2 6 4 00 1 9 6 4 4 MA Y BE c H A N G E D BY


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    PDF FO-50360-L 2FEB03 02MAR06 JG-41241 FORCE-----20 2FEB03 V7-1K24E9 V7-1K24E9

    dw 084

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST GP 00 LTR A DESCRIPTION DATE RELEASED DWN 02M AR06 APVD RG MP D .50 [12.70 .50 [12.70] 6. FOR TERMINATION REFER TO 1 9 2 6 0 7 9 - 1


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    PDF 02MAR2006 02MAR06 31MAR2000 03MAR06 dw 084

    Untitled

    Abstract: No abstract text available
    Text: TH I S DRAW I NG IS UNPUBL I S H E D . C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS ALL CORPORATIO N FOR P U B L I C A T I ON R IGHTS 20 REV ISIO NS RESERVED. DESCRIPTION R O R E V I S E D PER O G 3 0 - I I 0 0 - 0 4 2 1J1JLY05 R E V I S E D RER E C O - 0 5 - 0 I 0 0 4 5


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    PDF 1J1JLY05 02MAR06 03MAR06 18JLJLY2005 I8JULY2005 3IMAR2000