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Vishay Intertechnologies SI4392ADY-T1-E3 MOSFETs 30V 21.5A 6.25W
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Mouser Electronics	SI4392ADY-T1-E3					1 - 10 - 100 - 1000 - 10000 $0.838	Get Quote

SI4392ADY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses	Original	PDF	Si4392ADY 2002/95/EC Si4392ADY-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si4392ADY Abstract: Si4392ADY-T1-E3 Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses	Original	PDF	Si4392ADY Si4392ADY-T1-E3 S-61089-Rev. 19-Jun-06
2648 Abstract: 3271 AN609 Si4392ADY Text: Si4392ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4392ADY AN609 02-Mar-06 2648 3271
Si4392ADY Abstract: Si4392ADY-T1-E3 SI4392 Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses	Original	PDF	Si4392ADY Si4392ADY-T1-E3 18-Jul-08 SI4392
Untitled Abstract: No abstract text available Text: Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY rDS on (W) ID (A)a 0.0075 @ VGS = 10 V 21.5 0.0115 @ VGS = 4.5 V 17.4 VDS (V) 30 Qg (Typ) 12 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses	Original	PDF	Si4392ADY Si4392ADY-T1 08-Apr-05
Untitled Abstract: No abstract text available Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses	Original	PDF	Si4392ADY Si4392ADY-T1-E3 08-Apr-05
Untitled Abstract: No abstract text available Text: Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY rDS on (W) ID (A)a 0.0075 @ VGS = 10 V 21.5 0.0115 @ VGS = 4.5 V 17.4 VDS (V) 30 Qg (Typ) 12 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses	Original	PDF	Si4392ADY Si4392ADY-T1 51802--Rev.
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	PDF	O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	PDF	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS