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    BUK7212-55B

    Abstract: No abstract text available
    Text: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original
    BUK7212-55B M3D300 OT428 BUK7212-55B PDF

    55B0

    Abstract: BUK7212-55B
    Text: DP AK BUK7212-55B N-channel TrenchMOS standard level FET Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    BUK7212-55B 55B0 BUK7212-55B PDF

    BUK7211-55B

    Abstract: 03nl03 03nl06
    Text: BUK7211-55B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very


    Original
    BUK7211-55B M3D300 BUK7211-55B OT428 03nl03 03nl06 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUK7212-55B N-channel TrenchMOS standard level FET Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    BUK7212-55B PDF