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    HD radio nxp application

    Abstract: BUK9217-75B
    Text: DP AK BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9217-75B HD radio nxp application BUK9217-75B PDF

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    Abstract: No abstract text available
    Text: DP AK BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9217-75B PDF

    03no42

    Abstract: BUK9217-75B
    Text: BUK9217-75B TrenchMOS logic level FET Rev. 01 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		BUK9217-75B M3D300 OT428 03no42 BUK9217-75B PDF