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    045N1 Search Results

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    045N1 Price and Stock

    Pulse Electronics Corporation BSPQ000603045N1H00

    FIXED IND 5.1NH 400MA 250MOHM SM
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    DigiKey BSPQ000603045N1H00 Digi-Reel 14,695 1
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    BSPQ000603045N1H00 Cut Tape 14,695 1
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    Avnet Americas BSPQ000603045N1H00 Reel 9 Weeks 15,000
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    Mouser Electronics BSPQ000603045N1H00 14,735
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    Newark BSPQ000603045N1H00 Cut Tape 15,000 1
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    Sager BSPQ000603045N1H00 15,000
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    Goford Semiconductor GT045N10D5

    MOSFET N-CH 100V 120A DFN5*6-8L
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    DigiKey GT045N10D5 Cut Tape 4,517 1
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    GT045N10D5 Digi-Reel 4,517 1
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    Infineon Technologies AG IPP045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO220-3
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    DigiKey IPP045N10N3GXKSA1 Tube 1,545 1
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    Avnet Americas IPP045N10N3GXKSA1 Bulk 16 Weeks, 4 Days 1
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    IPP045N10N3GXKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPP045N10N3GXKSA1 6,454
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    Newark IPP045N10N3GXKSA1 Bulk 1,335 1
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    TME IPP045N10N3GXKSA1 4 1
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    Chip One Stop IPP045N10N3GXKSA1 Tube 500
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    IPP045N10N3GXKSA1 Tube 407
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    EBV Elektronik IPP045N10N3GXKSA1 17 Weeks 500
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    Win Source Electronics IPP045N10N3GXKSA1 90,400
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    UMW FDP045N10A

    MOSFET N-CH 100V 120A TO220
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    DigiKey FDP045N10A Tube 982 1
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    Infineon Technologies AG IPI045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO262-3
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    DigiKey IPI045N10N3GXKSA1 Tube 844 1
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    Mouser Electronics IPI045N10N3GXKSA1
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    Rochester Electronics IPI045N10N3GXKSA1 233 1
    • 1 $1.59
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    TME IPI045N10N3GXKSA1 1
    • 1 $2.62
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    EBV Elektronik IPI045N10N3GXKSA1 17 Weeks 500
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    045N1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Text: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Text: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF