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    04NG Search Results

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    UCC3804NG4 Texas Instruments Low-Power BiCMOS Current-Mode PWM 8-PDIP 0 to 70 Visit Texas Instruments Buy
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    04NG Price and Stock

    Infineon Technologies AG IPB011N04NGATMA1

    MOSFET N-CH 40V 180A TO263-7
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    DigiKey IPB011N04NGATMA1 Reel 4,000 1,000
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    Newark IPB011N04NGATMA1 Bulk 1
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    Rochester Electronics IPB011N04NGATMA1 1,000 1
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    Chip1Stop IPB011N04NGATMA1 Cut Tape 1,178
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    EBV Elektronik IPB011N04NGATMA1 17 Weeks 1,000
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    Win Source Electronics IPB011N04NGATMA1 3,500
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    BOYD Laconia MAX04NG

    MAX CLIP TO-247/MAX247 STD-FORCE
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    DigiKey MAX04NG Bulk 3,799 1
    • 1 $0.41
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    Mouser Electronics MAX04NG
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    Master Electronics MAX04NG 10,044
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    Infineon Technologies AG IPB015N04NGATMA1

    MOSFET N-CH 40V 120A D2PAK
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    DigiKey IPB015N04NGATMA1 Cut Tape 3,125 1
    • 1 $5.06
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    IPB015N04NGATMA1 Digi-Reel 3,125 1
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    IPB015N04NGATMA1 Reel 1,000 1,000
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    Avnet Americas IPB015N04NGATMA1 Reel 16 Weeks 1,000
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    Mouser Electronics IPB015N04NGATMA1 985
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    TME IPB015N04NGATMA1 1
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    EBV Elektronik IPB015N04NGATMA1 17 Weeks 1,000
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    UMW IPB015N04NG

    MOSFET N-CH 40V 120A D2PAK
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    DigiKey IPB015N04NG Reel 800 800
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    IPB015N04NG Digi-Reel 800 1
    • 1 $1.37
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    IPB015N04NG Cut Tape 800 1
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    Infineon Technologies AG IPP041N04NGXKSA1

    MOSFET N-CH 40V 80A TO220-3
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    DigiKey IPP041N04NGXKSA1 Tube 403 1
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    Avnet Americas IPP041N04NGXKSA1 Tube 16 Weeks 1,000
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    Newark IPP041N04NGXKSA1 Bulk 257 1
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    Rochester Electronics IPP041N04NGXKSA1 538 1
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    TME IPP041N04NGXKSA1 1
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    EBV Elektronik IPP041N04NGXKSA1 17 Weeks 500
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    04NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    04NG

    Abstract: 48 04NG 4804NG 369D
    Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G

    04ng

    Abstract: NTD5804NG mosfet 04ng 369D NTD5804NT4G 35V10
    Text: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original     		PDF NTD5804N NTD5804N/D 04ng NTD5804NG mosfet 04ng 369D NTD5804NT4G 35V10

    48 04NG

    Abstract: 4804NG 04NG NTD4804NT4G 4804N
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N

    Untitled

    Abstract: No abstract text available
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D

    04NG

    Abstract: No abstract text available
    Text: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original     		PDF NTD5804N NTD5804N/D 04NG

    04NG

    Abstract: 369D NTD5804NG NTD5804NT4G
    Text: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original     		PDF NTD5804N NTD5804N/D 04NG 369D NTD5804NG NTD5804NT4G

    04NG

    Abstract: 369D NTD5804NG NTD5804NT4G
    Text: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original     		PDF NTD5804N NTD5804N/D 04NG 369D NTD5804NG NTD5804NT4G

    48 04NG

    Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117

    49 04NG

    Abstract: No abstract text available
    Text: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4904N NTD4904N/D 49 04NG

    Untitled

    Abstract: No abstract text available
    Text: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NTD5804N, NTDV5804N AEC-Q101 NTD5804N/D

    04NG

    Abstract: 49 04ng NTD4904NT4G 4904ng 369D
    Text: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4904N NTD4904N/D 04NG 49 04ng NTD4904NT4G 4904ng 369D

    NTD5804NT4G

    Abstract: No abstract text available
    Text: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF NTD5804N, NTDV5804N NTD5804N/D NTD5804NT4G

    NTD4904NT4G

    Abstract: No abstract text available
    Text: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4904N NTD4904N/D NTD4904NT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NTD5804N, NTDV5804N NTD5804N/D

    NTDV5804

    Abstract: No abstract text available
    Text: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NTD5804N, NTDV5804N AEC-Q101 NTD5804N/D NTDV5804

    04NG

    Abstract: 369D
    Text: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original     		PDF NTD5804N NTD5804N/D 04NG 369D

    04NG

    Abstract: 4804N 48 04NG 4804NG NTD4804NT4G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 4804N 48 04NG 4804NG NTD4804NT4G

    4904ng

    Abstract: 04NG 49 04ng NTD4904NT4G 369D NTD4904N
    Text: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4904N NTD4904N/D 4904ng 04NG 49 04ng NTD4904NT4G 369D NTD4904N

    48 04NG

    Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4

    48 04NG

    Abstract: 04NG
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D 48 04NG 04NG

    04NG

    Abstract: k 790
    Text: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original     		PDF NTD5804N NTD5804N/D 04NG k 790