PC28F256P33
Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read
|
Original
|
PDF
|
P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
PC28F256P33
JS28F256P33
PC48F
pc28F256P33T
PC28F256P33B
PC28F256p33bf
PC28F256P33TF
DIODE 61 BP
DIODE BP
truth table NOT gate 74
|
pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
|
Original
|
PDF
|
P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
|
U4B R950
Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370
|
Original
|
PDF
|
MPC8560
MPC8560UG
CH370
U4B R950
PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC
gigabyte MOTHERBOARD CIRCUIT diagram
C828 3-pin transistor
C1162
transistor C1162
gigabyte g31 MOTHERBOARD SERVICE MANUAL
emp3128
transistor C1162 Scheme
motorola r1009
|
RC28F256P33BF
Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,
|
Original
|
PDF
|
P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KBcument;
RC28F256P33BF
JS28F256P33
PC28F256P33
pc28F256P33T
RC28F256P33TF
JS28F256P33BF
PC28F256P33TF
pc28f256p33b
PC28F256P33BF
PC48F4400P0TB0E
|
pc28f00ap30
Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
|
Original
|
PDF
|
P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F512P30
PC28F00AP30TF
pc28f00ap
PC28F512P30BF
PC28F00BP30EF
pc28f00ap30ef
PC28F00AP30BF
JS28F512P30BF
|
TSOP 48 pin flash gbit
Abstract: JS28F00AP33BF 1FFC000
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
|
Original
|
PDF
|
P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
TSOP 48 pin flash gbit
JS28F00AP33BF
1FFC000
|
pc28f00ap30
Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
|
Original
|
PDF
|
P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F00AP30TF
PC28F00AP30EF
PC28F512P30
JS28F512
PC28F512P30TF
JS28F512P30BF
pc28f00ap30bf
PC28F00BP30
|
JS28F256P33
Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Text: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,
|
Original
|
PDF
|
P3365nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
JS28F256P33
PC28F256P33
PC28F256P33BF
RC28F256P33
RC28F256P33BF
JS28F256P33BF
JS28F256P33TF
PC48F4400P0TB0E
PC28F256P33B
PC28F256P33TF
|
JS28F320C3
Abstract: No abstract text available
Text: Intel Advanced+ Boot Block Flash Memory C3 28F800C3, 28F160C3, 28F320C3 (x16) Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V– 3.6 V read/program/erase — 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O
|
Original
|
PDF
|
28F800C3,
28F160C3,
28F320C3
RC28F160C3TC70
RC28F160C3BC70
RC28F160C3TC80
RC28F160C3BC80
RC28F160C3TC90
RC28F160C3BC90
RC28F160C3TA90
JS28F320C3
|
PC28F00AP33BF
Abstract: L 1123 1FF4000
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
|
Original
|
PDF
|
P33-65nm
512-Mbit,
105ns
16-word
52MHz
512-word
46MByte/s
32-KByte
P33-65nm
PC28F00AP33BF
L 1123
1FF4000
|
Untitled
Abstract: No abstract text available
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
|
Original
|
PDF
|
P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-KByte
|
JS28F512P33BF
Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
|
Original
|
PDF
|
P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-ing
JS28F512P33BF
JS28F512
pc28f00ap33
PC28F00AP33BF
truth table NOT gate 74
JS28F512P33TF
PC28F00AP33TF
JS28F512P33EF
PC28F00BP33EF
JS28F00AP33BF
|
0DQ154Q
Abstract: No abstract text available
Text: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il
|
OCR Scan
|
PDF
|
0DQ154Q
IXSN50N120AU1
OT-227
|
Untitled
Abstract: No abstract text available
Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance
|
OCR Scan
|
PDF
|
Am29F200A
8-Bit/128
16-Bit)
|
|
|
Untitled
Abstract: No abstract text available
Text: DS1758Y DALLAS s e m ic o n d u c to r _ DS1758Y 3-V olt Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power OBJ • Data is automatically write protected during power loss 1 1 40 1
|
OCR Scan
|
PDF
|
DS1758Y
40-pin
1413G
DS1758Y
40-PIN
|
Untitled
Abstract: No abstract text available
Text: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he
|
OCR Scan
|
PDF
|
16-BIT
|
Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a
|
OCR Scan
|
PDF
|
1Mx64)
144-pins,
B81V1
|
BC 557 npn
Abstract: UZ115 EHA7-2625-5 MIL-I-45208A EHA260X EHA2625
Text: 41E » EHA2600 SERIES ELANTEC INC 312=1337 ODDISGT 0 B E L A EHA2600 Series Wideband, High Impedance Operational Amplifier HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS . F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • • • • Elantec’s EHA2600 Series of high performance op amps is de
|
OCR Scan
|
PDF
|
EHA2600
rpa41
0e-18bf
800e-18bf
312TSS7
EHA2600Series
EHA2620
BC 557 npn
UZ115
EHA7-2625-5
MIL-I-45208A
EHA260X
EHA2625
|
Untitled
Abstract: No abstract text available
Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 4M bit dynam ic RAM organized 262,144 x 16-bit configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data O ut mode
|
OCR Scan
|
PDF
|
16-bit
HY51V4264B
16-bits
|
chqb
Abstract: HY51V16164B
Text: •HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V 16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
PDF
|
HY51V16164B
16-bit
16164B
16-bit.
42/42pin
1AD59-10-MAY95
0Q315
chqb
|
Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
PDF
|
HY51V16164B
16-bit
Y51V16164B
16-bit.
42/42pin
4b75DÃ
1AD59-10-MAY95
|
Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 MEGABIT FLASH EEPROM M ICROSYSTEM S D P Z 1 2 8 X 3 2 V I/D P Z 1 2 8 X 3 2 V IP DESCRIPTION: The D P Z 128X32VI/VIP is a 4 megabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH
|
OCR Scan
|
PDF
|
128X32VI/VIP
DPZ128X32VI/VIP
250ns
120mA
400fiA
150ns
170ns
200ns
|
smj55161
Abstract: No abstract text available
Text: SMJ55161 262144 BY 16-BIT MULTIPORT VIDEO RAM SSMS056D - MAY 1995 - REVISED OCTOBER 1997 Organization: - DRAM: 262 144 by 16 Bits - SAM: 256 by 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to
|
OCR Scan
|
PDF
|
SSMS056D
SMJ55161
16-BIT
SGMS056D
R-CDFP-F64)
|
Untitled
Abstract: No abstract text available
Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS0S7C - APRIL 1998 - REVISED JUNE 199? Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256 Words x 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to
|
OCR Scan
|
PDF
|
SMJ55166
16-BIT
SGMS057C
|