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    Abstract: No abstract text available
    Text: “HYUNDAI Y51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The Y51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques


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    PDF HY51V16164B 16-bit Y51V16164B 16-bit. 42/42pin 4b75DÃ 1AD59-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


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    PDF 1Mx16, 16-bit 1Mx16