Untitled
Abstract: No abstract text available
Text: features and Benefits B Sizes 8 to 50 circuits • Low profile H Fully shrouded to protect pins during mating H 2 polarized end slots C -G rid m o i e x 2.54mm .100" Pitch Electrical C-Grid SL” Current: 2.5A Dielectric Withstanding Voltage: 600V AC/1 min.
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PS-70246
UL94V-0
b2fl7325
0DQ71D2
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Untitled
Abstract: No abstract text available
Text: MP1230A/31A/32A CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter Z*EXQR FEATURES • Superior Ruggedized 1230 Series: 2 KVE S D • Four Quadrant Multiplication • Stable, More Accurate Segmented DAC Approach 0.2 ppm/°C Linearity Tempco
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MP1230A/31A/32A
12-Bit
12-Bit
MP1208/1209/1210
16-Bit
MP7636A
MP1230A
DB11-0
342SblÃ
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.0 FUJITSU D A T A S H E E T - EDC4B V724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered Generai Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
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32MByte
EDC4BV724
32-megabyte
168-pins,
MB81V1
74ABT16244
168-pin
450-j
4T75b
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WJ-A88
Abstract: No abstract text available
Text: WJ-A88 / SMA88 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.7 dB TYP. HIGH OUTPUT POWER: +20.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.)
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WJ-A88
SMA88
50-ohm
0DQ71
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Untitled
Abstract: No abstract text available
Text: GMM7734110CS/SG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 77341IO C S /S G is an 4M x 72 bits EDO D ynam ic RA M M O D U L E w hich is assem bled 18 pieces o f 4M x 4bit EDO D R A M s in 24 pin SO J package, tw o 16bit
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GMM7734110CS/SG
16bit
48pin
7734110C
GMM7734110CS/SG-6/7
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Untitled
Abstract: No abstract text available
Text: C -G rid m o l e x 2.54mm .100" Pitch Vs— ' C-Grid III " Crimp Connector Housing FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Sizes 6 to 64 circuits Voltage: 350V ■ Polarized Current: 3.0A max. ■ Friction lock Contact Resistance: 20m £2 max.
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PS-99020-0001
b2fi7325
0DQ713S
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ma8601
Abstract: FCD 5250
Text: GMM7731010CT/TG-6/7 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7 7 3 101OCT/TG is an 1M x 72 bits ED O D ynam ic R A M M O D U LE w hich is assem bled 4 pieces of 1M x 16bit EDO D R A M s in 44 pin T SO P II package, 2 pieces
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GMM7731010CT/TG-6/7
101OCT/TG
16bit
48pin
GMM7731010CT/TG
11111111Itili
ma8601
FCD 5250
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1A20-A23
Abstract: 99108 G0723 S-108 SR 7231 10BASE2 10BASE5 RA13 SMC91C90 pqfp 3.2mm footprint
Text: STANDARD MICROSYSTEMS bSE Û5b4bôb D b2b i snc SM C 91C 90 S T A N D A R D M IC R O S Y S T E M S C 0 R P 0 R A T 1 0 I\L ^ = = ^ = s r 0DD714S PRELIMINARY COMPONENT PRODUCTS DIVISION 80 A rk a y D rive, H a u p p a u g e , NY 11788 5161 435-6000 Fax <516 231-6004
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0DD714S
SMC91C90
2S1-60M
10BASE-T
1A20-A23
99108
G0723
S-108
SR 7231
10BASE2
10BASE5
RA13
SMC91C90
pqfp 3.2mm footprint
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Untitled
Abstract: No abstract text available
Text: HbE D CYPRESS SEMICO NDU CTOR 250^2 0DD7121 2 E3CYP CY7C343 CYPRESS SEMICONDUCTOR 64-Macrocell MAX EPLD Features Functional Description • 64 MAX macrocells in 4 LABs • 8 dedicated inputs, 24 bidirectional I/O pins • Program m able interconnect array
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0DD7121
CY7C343
64-Macrocell
44-pin
CY7C343
CY7C343-35H
CY7C343-40H
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Untitled
Abstract: No abstract text available
Text: GMM7731000CT/TG -6/7 LG Semicon Co.,Ltd. 1,048,576 W O RD S x 72 BIT CMOS DYNAMIC RAM MODULE Description Features T he G M M 7731OOOCT/TGis an 1M x 72 bits Dynam ic RAM M O DULE w hich is assem bled 4 pieces o f 1M x 16bit D RA M s in 44 pin TSO P II package, 2 pieces o f 1M
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GMM7731000CT/TG
7731OOOCT/TGis
16bit
20pin
48pin
7731000C
Waveform-11
GMM7731000CT/TG
11H11111IHi
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lz 1013C
Abstract: No abstract text available
Text: GMM7641013CSG-6/7 LG Semicon Co., Ltd. 1,048,576 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7 6 4 1013C SG is an 1M x 64 b its E D O * 1 6 8 p in s D ual In-L ine Package - G M M 7641013C S G : G old plating • E D O M ode C apability
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GMM7641013CSG-6/7
1013C
16bit
7641013C
E13VN
S93ue»
lz 1013C
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